Article Impacts of vacancy complexes on the room-temperature photoluminescence lifetime of state-of-the-art GaN substrates, epitaxial layers, and Mg-implanted layers

Shigefusa F. Chichibu (Institute of Multidisciplinary Research for Advanced Materials, Tohoku University) ; Kohei Shima (Institute of Multidisciplinary Research for Advanced Materials, Tohoku University) ; Akira Uedono (Department of Pure and Applied Sciences, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan) ; Shoji Ishibashi (AIST) ; Hiroko Iguchi (TOYOTA CENTRAL R&D LABS., INC.) ; Tetsuo Narita (TOYOTA CENTRAL R&D LABS., INC.) ; Keita Kataoka (TOYOTA CENTRAL R&D LABS., INC.) ; Ryo Tanaka (Fuji Electric Corporation) ; Shinya Takashima (Fuji Electric Corporation) ; Katsunori Ueno (Fuji Electric Corporation) ; Masaharu Edo (Fuji Electric Corporation) ; Hirotaka Watanabe (Institute of Materials and Systems for Sustainability, Nagoya University) ; Atsushi Tanaka (Institute of Materials and Systems for Sustainability, Nagoya University) ; Yoshio Honda (Institute of Materials and Systems for Sustainability, Nagoya University) ; Jun Suda (Institute of Materials and Systems for Sustainability, Nagoya University) ; Hiroshi Amano (Institute of Materials and Systems for Sustainability, Nagoya University) ; Tetsu Kachi (Institute of Materials and Systems for Sustainability, Nagoya University) ; Toshihide Nabatame SAMURAI ORCID (Research Center for Materials Nanoarchitectonics (MANA), National Institute for Materials ScienceROR) ; Yoshihiro Irokawa SAMURAI ORCID (Research Center for Electronic and Optical Materials/Functional Materials Field/Next-generation Semiconductor Group, National Institute for Materials ScienceROR) ; Yasuo Koide SAMURAI ORCID (Research Center for Electronic and Optical Materials/Functional Materials Field/Next-generation Semiconductor Group, National Institute for Materials ScienceROR)

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Shigefusa F. Chichibu, Kohei Shima, Akira Uedono, Shoji Ishibashi, Hiroko Iguchi, Tetsuo Narita, Keita Kataoka, Ryo Tanaka, Shinya Takashima, Katsunori Ueno, Masaharu Edo, Hirotaka Watanabe, Atsushi Tanaka, Yoshio Honda, Jun Suda, Hiroshi Amano, Tetsu Kachi, Toshihide Nabatame, Yoshihiro Irokawa, Yasuo Koide. Impacts of vacancy complexes on the room-temperature photoluminescence lifetime of state-of-the-art GaN substrates, epitaxial layers, and Mg-implanted layers. JOURNAL OF APPLIED PHYSICS. 2024, 135 (), 185701-185701.
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(abstract)

For rooting the development of GaN-based optoelectronic devices, understanding the roles of midgap recombination centers (MGRCs), namely nonradiative recombination centers and deep-state radiative recombination centers, on the carrier recombination dynamics is an essential task. By using the combination of time-resolved photoluminescence and positron annihilation spectroscopy (PAS) measurements, the origins of major MGRCs in the state-of-the-art GaN epilayers, bulk crystals, and Mg-implanted layers were identified and their concentrations were quantified for deriving the capture coefficients of minority carriers. In this article, potential standardization of the room-temperature photoluminescence lifetime for the near-band-edge emission (𝜏PLRT) as the concentration of major MGRCs well below the detection limit of PAS is proposed. For n-GaN substrates and epilayers grown from the vapor phase, 𝜏PLRT was limited by the concentration of carbon on N sites or divacancies comprising a Ga vacancy (VGa) and a N vacancy (VN), [VGaVN], when carbon concentration was higher or lower, respectively, than approximately 1016 cm-3. Here, carbon and VGaVN act as major deep-state radiative and nonradiative recombination centers, respectively. While, major MGRCs in bulk GaN crystals were identified as VGa(VN)3 vacancy clusters in Na-flux GaN and VGa or VGaVN buried by a hydrogen and/or VGa decorated with oxygen on N sites, VGa(ON)3-4, inammonothermal GaN. The values of 𝜏PLRT in n-GaN samples are compared with those of p-GaN, in which 𝜏PLRT was limited by the concentration of VGa(VN)2 in Mg-doped epilayers while by the concentrations of VGaVN and (VGaVN)3 in Mg-implanted GaN right after the implantation and after appropriate activation annealings, respectively.

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Keyword: GaN

Date published: 2024-05-14

Publisher: American Institute of Physics

Journal:

  • JOURNAL OF APPLIED PHYSICS (ISSN: 10897550) vol. 135 p. 185701-185701

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Manuscript type: Publisher's version (Version of record)

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First published URL: https://doi.org/10.1063/5.0201931

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Updated at: 2024-05-09 16:30:16 +0900

Published on MDR: 2024-05-09 16:30:17 +0900

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