Impacts of vacancy complexes on the room-temperature photoluminescence lifetime of state-of-the-art GaN substrates, epitaxial layers, and Mg-implanted  layers

Shigefusa F. Chichibu; Kohei Shima; Akira Uedono; Shoji Ishibashi; Hiroko Iguchi; Tetsuo Narita; Keita Kataoka; Ryo Tanaka; Shinya Takashima; Katsunori Ueno; Masaharu Edo; Hirotaka Watanabe; Atsushi Tanaka; Yoshio Honda; Jun Suda; Hiroshi Amano; Tetsu Kachi; Toshihide Nabatame; Yoshihiro Irokawa; Yasuo Koide

doi:10.1063/5.0201931

ジャーナル論文 Impacts of vacancy complexes on the room-temperature photoluminescence lifetime of state-of-the-art GaN substrates, epitaxial layers, and Mg-implanted layers

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JAP135(2024)185701_GaNMGRCWalukiewiczTribute.pdf

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Shigefusa F. Chichibu, Kohei Shima, Akira Uedono, Shoji Ishibashi, Hiroko Iguchi, Tetsuo Narita, Keita Kataoka, Ryo Tanaka, Shinya Takashima, Katsunori Ueno, Masaharu Edo, Hirotaka Watanabe, Atsushi Tanaka, Yoshio Honda, Jun Suda, Hiroshi Amano, Tetsu Kachi, Toshihide Nabatame, Yoshihiro Irokawa, Yasuo Koide. Impacts of vacancy complexes on the room-temperature photoluminescence lifetime of state-of-the-art GaN substrates, epitaxial layers, and Mg-implanted layers. JOURNAL OF APPLIED PHYSICS. 2024, 135 (), 185701-185701. https://doi.org/10.1063/5.0201931

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(abstract)

For rooting the development of GaN-based optoelectronic devices, understanding the roles of midgap recombination centers (MGRCs), namely nonradiative recombination centers and deep-state radiative recombination centers, on the carrier recombination dynamics is an essential task. By using the combination of time-resolved photoluminescence and positron annihilation spectroscopy (PAS) measurements, the origins of major MGRCs in the state-of-the-art GaN epilayers, bulk crystals, and Mg-implanted layers were identified and their concentrations were quantified for deriving the capture coefficients of minority carriers. In this article, potential standardization of the room-temperature photoluminescence lifetime for the near-band-edge emission (𝜏PLRT) as the concentration of major MGRCs well below the detection limit of PAS is proposed. For n-GaN substrates and epilayers grown from the vapor phase, 𝜏PLRT was limited by the concentration of carbon on N sites or divacancies comprising a Ga vacancy (VGa) and a N vacancy (VN), [VGaVN], when carbon concentration was higher or lower, respectively, than approximately 1016 cm-3. Here, carbon and VGaVN act as major deep-state radiative and nonradiative recombination centers, respectively. While, major MGRCs in bulk GaN crystals were identified as VGa(VN)3 vacancy clusters in Na-flux GaN and VGa or VGaVN buried by a hydrogen and/or VGa decorated with oxygen on N sites, VGa(ON)3-4, inammonothermal GaN. The values of 𝜏PLRT in n-GaN samples are compared with those of p-GaN, in which 𝜏PLRT was limited by the concentration of VGa(VN)2 in Mg-doped epilayers while by the concentrations of VGaVN and (VGaVN)3 in Mg-implanted GaN right after the implantation and after appropriate activation annealings, respectively.

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Creative Commons BY Attribution 4.0 International

キーワード: GaN

刊行年月日: 2024-05-14

出版者: American Institute of Physics

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JOURNAL OF APPLIED PHYSICS (ISSN: 10897550) vol. 135 p. 185701-185701

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原稿種別: 出版者版 (Version of record)

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公開URL: https://doi.org/10.1063/5.0201931

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更新時刻: 2024-05-09 16:30:16 +0900

MDRでの公開時刻: 2024-05-09 16:30:17 +0900

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