23 件のレコードが見つかりました。
All About the Interface: Do Residual Contaminants at A High‐Quality h‐BN Monolayer Perylene Diimide Interface Cause Charge Trapping?
- ジャーナル論文
- 著者
-
;Lukas Renn (author) (この著者で検索);Lisa S. Walter (author) (この著者で検索)Kenji Watanabe (author) (この著者で検索)National Institute for Materials Science
;
Takashi Taniguchi (author) (この著者で検索)National Institute for Materials Science
;
R. Thomas Weitz (author) (この著者で検索) - キーワード
- Charge transport, organic semiconducting crystals, hexagonal boron nitride
- 刊行年月日
- 2022-01-29
- 更新時刻
- 2025-02-26 08:30:49 +0900
Evolution of nanopores in hexagonal boron nitride
- ジャーナル論文
- 著者
-
;Chunhui Dai (author) (この著者で検索);Derek Popple (author) (この著者で検索);Cong Su (author) (この著者で検索);Ji-Hoon Park (author) (この著者で検索)Kenji Watanabe (author) (この著者で検索)National Institute for Materials Science
;
Takashi Taniguchi (author) (この著者で検索)National Institute for Materials Science
;
;Jing Kong (author) (この著者で検索)Alex Zettl (author) (この著者で検索)
- キーワード
- Atomically-precise nanopores, hexagonal boron nitride, transmission electron microscopy
- 刊行年月日
- 2023-06-05
- 更新時刻
- 2025-02-14 12:32:12 +0900
Direct exciton emission from atomically thin transition metal dichalcogenide heterostructures near the lifetime limit
- ジャーナル論文
- 著者
-
;Jakob Wierzbowski (author) (この著者で検索);Julian Klein (author) (この著者で検索);Florian Sigger (author) (この著者で検索);Christian Straubinger (author) (この著者で検索);Malte Kremser (author) (この著者で検索)Takashi Taniguchi (author) (この著者で検索)National Institute for Materials Science
;
Kenji Watanabe (author) (この著者で検索)National Institute for Materials Science
;
;Ursula Wurstbauer (author) (この著者で検索);Alexander W. Holleitner (author) (この著者で検索);Michael Kaniber (author) (この著者で検索);Kai Müller (author) (この著者で検索)Jonathan J. Finley (author) (この著者で検索)
- キーワード
- Transition metal dichalcogenides, hexagonal boron nitride, excitons
- 刊行年月日
- 2017-09-28
- 更新時刻
- 2025-02-28 16:31:06 +0900
Self-aligned gate electrode for hydrogen-terminated diamond field-effect transistors with a hexagonal boron nitride gate insulator
- ジャーナル論文
- 著者
-
Yosuke Sasama (author) (この著者で検索)
;
Takuya Iwasaki (author) (この著者で検索)
;
Mohammad Monish (author) (この著者で検索)
;
Kenji Watanabe (author) (この著者で検索)
;
Takashi Taniguchi (author) (この著者で検索)
;
Yamaguchi Takahide (author) (この著者で検索)
- キーワード
- Hydrogen-terminated diamond, Field-effect transistors, hexagonal boron nitride, Self-aligned gate electrode
- 刊行年月日
- 2024-08-26
- 更新時刻
- 2024-09-12 16:30:45 +0900
Dielectric strength weakening of hexagonal boron nitride nanosheets under mechanical stress
- ジャーナル論文
- 著者
-
;Bingjie Wang (author) (この著者で検索);Chuanli Yu (author) (この著者で検索);Yifan Jiang (author) (この著者で検索);Chong Tian (author) (この著者で検索);Jiamin Tian (author) (この著者で検索);Shuo Li (author) (この著者で検索);Zheng Fang (author) (この著者で検索);Menglan Li (author) (この著者で検索);Weilong Wu (author) (この著者で検索);Zhaohe Dai (author) (この著者で検索)Takashi Taniguchi (author) (この著者で検索)National Institute for Materials Science
;
Kenji Watanabe (author) (この著者で検索)National Institute for Materials Science
;
;Qing Chen (author) (この著者で検索)Xianlong Wei (author) (この著者で検索)
- キーワード
- hexagonal boron nitride, dielectric strength , mechanical stress
- 刊行年月日
- 2025-08-29
- 更新時刻
- 2026-02-17 08:30:11 +0900
A high-mobility electronic system at an electrolyte-gated oxide surface
- ジャーナル論文
- 著者
-
;Patrick Gallagher (author) (この著者で検索);Menyoung Lee (author) (この著者で検索);Trevor A. Petach (author) (この著者で検索);Sam W. Stanwyck (author) (この著者で検索);James R. Williams (author) (この著者で検索)Kenji Watanabe (author) (この著者で検索)National Institute for Materials Science
;
Takashi Taniguchi (author) (この著者で検索)National Institute for Materials Science
;
David Goldhaber-Gordon (author) (この著者で検索)
- キーワード
- Electrolyte gating, carrier density, hexagonal boron nitride
- 刊行年月日
- 2015-03-12
- 更新時刻
- 2025-02-28 08:30:38 +0900
Midgap radiative centers in carbon-enriched hexagonal boron nitride
- ジャーナル論文
- 著者
-
;Maciej Koperski (author) (この著者で検索);Diana Vaclavkova (author) (この著者で検索)Kenji Watanabe (author) (この著者で検索)National Institute for Materials Science
;
Takashi Taniguchi (author) (この著者で検索)National Institute for Materials Science
;
;Kostya S. Novoselov (author) (この著者で検索)Marek Potemski (author) (この著者で検索)
- キーワード
- Defect centers, hexagonal boron nitride, single-photon sources
- 刊行年月日
- 2020-06-16
- 更新時刻
- 2025-02-28 16:30:43 +0900
Phonon-enhanced nonlinearities in hexagonal boron nitride
- ジャーナル論文
- 著者
-
;Jared S. Ginsberg (author) (この著者で検索);M. Mehdi Jadidi (author) (この著者で検索);Jin Zhang (author) (この著者で検索);Cecilia Y. Chen (author) (この著者で検索);Nicolas Tancogne-Dejean (author) (この著者で検索);Sang Hoon Chae (author) (この著者で検索);Gauri N. Patwardhan (author) (この著者で検索);Lede Xian (author) (この著者で検索)Kenji Watanabe (author) (この著者で検索)National Institute for Materials Science
;
Takashi Taniguchi (author) (この著者で検索)National Institute for Materials Science
;
;James Hone (author) (この著者で検索);Angel Rubio (author) (この著者で検索)Alexander L. Gaeta (author) (この著者で検索)
- キーワード
- Polar crystals, optical nonlinearities, hexagonal boron nitride
- 刊行年月日
- 2023-11-24
- 更新時刻
- 2025-02-11 12:30:15 +0900
Microsphere-assisted generation of localized optical emitters in 2D hexagonal boron nitride
- ジャーナル論文
- 著者
-
;Xiliang Yang (author) (この著者で検索);Dong Hoon Shin (author) (この著者で検索)Kenji Watanabe (author) (この著者で検索)National Institute for Materials Science
;
Takashi Taniguchi (author) (この著者で検索)National Institute for Materials Science
;
;Peter G. Steeneken (author) (この著者で検索)Sabina Caneva (author) (この著者で検索)
- キーワード
- hexagonal boron nitride, microsphere, laser fabrication
- 刊行年月日
- 2025-06-05
- 更新時刻
- 2026-04-03 13:04:39 +0900
Optical control of multiple resistance levels in graphene for memristic applications
- ジャーナル論文
- 著者
-
;Harsimran Kaur Mann (author) (この著者で検索);Mainak Mondal (author) (この著者で検索);Vivek Sah (author) (この著者で検索)Kenji Watanabe (author) (この著者で検索)
;
Takashi Taniguchi (author) (この著者で検索)
;
Akshay Singh (author) (この著者で検索)
https://orcid.org/0000-0003-1059-065X
(unauthenticated)
;
Aveek Bid (author) (この著者で検索)
https://orcid.org/0000-0002-2378-7980
(unauthenticated)
- キーワード
- Neuromorphic computing, memristors, hexagonal boron nitride
- 刊行年月日
- 2024-10-29
- 更新時刻
- 2025-02-06 12:30:34 +0900