Download file (3.11MB)
Download as zip (2.85MB)

コレクション

引用

説明:

We demonstrate the reduction of the inhomogeneous linewidth of the free excitons in atomically thin transition metal dichalcogenides (TMDCs) by encapsulation within few nanometer thick hBN. Encapsulation is shown to result in a significant reduction of the 10K excitonic linewidths down to ∼ 3.5meV for n-MoSe2, ∼ 5.0meV for p-WSe2 and ∼ 4.8meV for n-MoS2. Evidence is obtained that the hBN environment effectively lowers the Fermi level since the relative spectral weight shifts towards the neutral exciton emission in n-doped TMDCs and towards charged exciton emission in p-doped TMDCs. Moreover, we find that fully encapsulated MoS2 shows resolvable exciton and trion emission even after high power density excitation in contrast to non-encapsulated materials.

権利情報:

• Creative Commons BY Attribution 4.0 International
  

キーワード: Transition metal dichalcogenides, hexagonal boron nitride, excitons

刊行年月日: 2017-09-28

出版者: Springer Science and Business Media LLC

掲載誌:

• Scientific Reports (ISSN: 20452322) vol. 7 issue. 1 12383

研究助成金:

原稿種別: 出版者版 (Version of record)

MDR DOI:

公開URL: https://doi.org/10.1038/s41598-017-09739-4

関連資料:

その他の識別子:

連絡先:

更新時刻: 2025-02-28 16:31:06 +0900

MDRでの公開時刻: 2025-02-28 16:31:06 +0900