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We demonstrate the reduction of the inhomogeneous linewidth of the free excitons in atomically thin transition metal dichalcogenides (TMDCs) by encapsulation within few nanometer thick hBN. Encapsulation is shown to result in a significant reduction of the 10K excitonic linewidths down to ∼ 3.5meV for n-MoSe2, ∼ 5.0meV for p-WSe2 and ∼ 4.8meV for n-MoS2. Evidence is obtained that the hBN environment effectively lowers the Fermi level since the relative spectral weight shifts towards the neutral exciton emission in n-doped TMDCs and towards charged exciton emission in p-doped TMDCs. Moreover, we find that fully encapsulated MoS2 shows resolvable exciton and trion emission even after high power density excitation in contrast to non-encapsulated materials.

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• Creative Commons BY Attribution 4.0 International
  

Keyword: Transition metal dichalcogenides, hexagonal boron nitride, excitons

Date published: 2017-09-28

Publisher: Springer Science and Business Media LLC

Journal:

• Scientific Reports (ISSN: 20452322) vol. 7 issue. 1 12383

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Manuscript type: Publisher's version (Version of record)

MDR DOI:

First published URL: https://doi.org/10.1038/s41598-017-09739-4

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Updated at: 2025-02-28 16:31:06 +0900

Published on MDR: 2025-02-28 16:31:06 +0900