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Neuromorphic computing has emphasized the need for memristors with non-volatile, multiple conductance levels. This paper demonstrates the potential of hexagonal boron nitride (hBN)/graphene heterostructures to act as memristors with multiple resistance states that can be optically tuned using visible light. The number of resistance levels in graphene can be controlled by modulating doping levels, achieved by varying the electric field strength or adjusting the duration of optical illumination. Our measurements show that this photodoping of graphene results from the optical excitation of charge carriers from the nitrogen-vacancy levels of hBN to its conduction band, with these carriers then being transferred to graphene by the gate-induced electric field. We develop a qualitative model to describe our observations. Additionally, utilizing our device architecture, we propose a memristive crossbar array for vector-matrix multiplications.

権利情報:

• Creative Commons BY Attribution 4.0 International
  

キーワード: Neuromorphic computing, memristors, hexagonal boron nitride

刊行年月日: 2024-10-29

出版者: Springer Science and Business Media LLC

掲載誌:

• npj 2D Materials and Applications (ISSN: 23977132) vol. 8 issue. 1 69

研究助成金:

原稿種別: 出版者版 (Version of record)

MDR DOI:

公開URL: https://doi.org/10.1038/s41699-024-00503-7

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更新時刻: 2025-02-06 12:30:34 +0900

MDRでの公開時刻: 2025-02-06 12:30:34 +0900