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説明:

We demonstrate that the limitations due to significant sources of disorder can be overcome by protecting the sample with a chemically inert, atomically smooth sheet of hexagonal boron nitride. We illustrate our technique with electrolyte-gated strontium titanate, whose mobility improves more than tenfold when protected with BN. We find this improvement even for our thinnest BN, of measured thickness 6 A, with which we can accumulate electron densities nearing 10^14 cm-2. Our technique is portable to other materials, and should enable future studies where high carrier density modulation is required but electrochemical reactions and surface disorder must be minimized.

権利情報:

• Creative Commons BY Attribution 4.0 International
  

キーワード: Electrolyte gating, carrier density, hexagonal boron nitride

刊行年月日: 2015-03-12

出版者: Springer Science and Business Media LLC

掲載誌:

• Nature Communications (ISSN: 20411723) vol. 6 issue. 1 6437

研究助成金:

原稿種別: 出版者版 (Version of record)

MDR DOI:

公開URL: https://doi.org/10.1038/ncomms7437

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更新時刻: 2025-02-28 08:30:38 +0900

MDRでの公開時刻: 2025-02-28 08:30:38 +0900