Article A high-mobility electronic system at an electrolyte-gated oxide surface

Patrick Gallagher ; Menyoung Lee ; Trevor A. Petach ; Sam W. Stanwyck ; James R. Williams ; Kenji Watanabe SAMURAI ORCID (National Institute for Materials ScienceROR) ; Takashi Taniguchi SAMURAI ORCID (National Institute for Materials ScienceROR) ; David Goldhaber-Gordon

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Patrick Gallagher, Menyoung Lee, Trevor A. Petach, Sam W. Stanwyck, James R. Williams, Kenji Watanabe, Takashi Taniguchi, David Goldhaber-Gordon. A high-mobility electronic system at an electrolyte-gated oxide surface. Nature Communications. 2015, 6 (1), 6437. https://doi.org/10.1038/ncomms7437
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(abstract)

We demonstrate that the limitations due to significant sources of disorder can be overcome by protecting the sample with a chemically inert, atomically smooth sheet of hexagonal boron nitride. We illustrate our technique with electrolyte-gated strontium titanate, whose mobility improves more than tenfold when protected with BN. We find this improvement even for our thinnest BN, of measured thickness 6 A, with which we can accumulate electron densities nearing 10^14 cm-2. Our technique is portable to other materials, and should enable future studies where high carrier density modulation is required but electrochemical reactions and surface disorder must be minimized.

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Keyword: Electrolyte gating, carrier density, hexagonal boron nitride

Date published: 2015-03-12

Publisher: Springer Science and Business Media LLC

Journal:

  • Nature Communications (ISSN: 20411723) vol. 6 issue. 1 6437

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Manuscript type: Publisher's version (Version of record)

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First published URL: https://doi.org/10.1038/ncomms7437

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Updated at: 2025-02-28 08:30:38 +0900

Published on MDR: 2025-02-28 08:30:38 +0900

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