Keyword: HVPE
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15 records found.

J_Appl_Phys_139_075302_(2026).pdf
Halide vapor phase epitaxy of a thick c -plane α-Ga2O3 film on a high-quality α-Cr2O3/sapphire template
Article
Creator
Yuichi Oshima SAMURAI ORCID ; Takayoshi Oshima SAMURAI ORCID ; Shiyu Xiao ORCID ; Kazuto Murakami ; Katsuhiro Imai ; Takahiro Tomita
Keyword
Ga2O3, HVPE, Cr2O3
Date published
2026-02-21
Updated at
2026-02-18 16:30:15 +0900
Rapid homoepitaxial growth of 011 -Ga2O3 by HCl-based halide vapor phase epitaxy.pdf
Rapid homoepitaxial growth of (011) β-Ga 2 O 3 by HCl-based halide vapor phase epitaxy
Article
Creator
Yuichi Oshima SAMURAI ORCID ; Takayoshi Oshima SAMURAI ORCID
Keyword
Ga2O3, HVPE
Date published
2025-12-31
Updated at
2025-11-28 08:30:04 +0900
EB_alpha-GO_240422-2HQ(clean).pdf
Epitaxial Lateral Overgrowth of c-plane α-Ga2O3 using a stripe mask with ultra-narrow windows
Article
Creator
Yuichi Oshima SAMURAI ORCID ; Takashi Shinohe
Keyword
Ga2O3, dislocation, HVPE, ELO
Date published
2025-05-19
Updated at
2025-05-21 16:30:09 +0900
Epitaxial lateral overgrowth of m-plane -Ga2O3 by halide vapor phase epitaxy-1.pdf
Epitaxial lateral overgrowth of m -plane α-Ga 2 O 3 by halide vapor phase epitaxy
Article
Creator
Yuichi Oshima SAMURAI ORCID ; Takashi Shinohe ORCID
Keyword
Ga2O3, dislocation, ELO, HVPE
Date published
2025-12-31
Updated at
2025-04-23 12:30:12 +0900
Manuscript clean pdf file(Oshima).pdf
Phase-controlled epitaxial lateral overgrowth of α-Ga2O3 by halide vapor phase epitaxy
Article
Creator
Yuichi Oshima SAMURAI ORCID ; Katsuaki Kawara ; Takayoshi Oshima ; Mitsuru Okigawa ; Takashi Shinohe
Keyword
α-Ga2O3, ELO, HVPE
Date published
2020-02-01
Updated at
2024-01-22 09:41:33 +0900
HVPE-aGa2O3-rapid growth200203.pdf
Rapid growth of α-Ga2O3 by HCl-boosted halide vapor phase epitaxy and effect of precursor supply conditions on crystal properties
Article
Creator
Yuichi Oshima ; Katsuaki Kawara ; Takayoshi Oshima ; Mitsuru Okigawa ; Takashi Shinohe
Keyword
α-Ga2O3, HVPE
Date published
2020-05-01
Updated at
2024-01-22 09:40:57 +0900
Manuscript clean source file (K-ELO)Oshima.pdf
In-plane orientation control of (001) κ-Ga2O3 by epitaxial lateral overgrowth through a geometrical natural selection mechanism
Article
Creator
Yuichi Oshima SAMURAI ORCID ; Katsuaki Kawara ; Takayoshi Oshima ; Takashi Shinohe
Keyword
κ-Ga2O3, ε-Ga2O3, ELO, domain, HVPE
Date published
2020-11-01
Updated at
2024-01-22 09:39:14 +0900
Epitaxial lateral overgrowth of r-plane α-Ga2O3 with stripe masks along .pdf
Epitaxial lateral overgrowth of r-plane α-Ga2O3 with stripe masks along -12-10>
Article
Creator
Yuichi Oshima SAMURAI ORCID ; Shingo Yagyu ; Takashi Shinohe
Keyword
α-Ga2O3, HVPE, dislocation, ELO
Date published
2021-11-07
Updated at
2024-01-30 16:49:49 +0900
Maskless_230605_clean.pdf
Reduction of dislocation density in α-Ga2O3 epilayers via rapid growth at low temperatures by halide vapor phase epitaxy
Article
Creator
Yuichi Oshima SAMURAI ORCID ; Hiroyuki Ando ; Takashi Shinohe
Keyword
α-Ga2O3, dislocation, HVPE
Date published
2023-06-01
Updated at
2024-06-23 08:30:11 +0900
BGO(-102)HVPE_full_230811_clean.pdf
Homoepitaxial growth of (-102) β-Ga2O3 by halide vapor phase epitaxy
Article
Creator
Yuichi Oshima SAMURAI ORCID ; Takayoshi Oshima SAMURAI ORCID
Keyword
β-Ga2O3, HVPE
Date published
2023-10-01
Updated at
2024-08-31 08:31:17 +0900