[Research Highlights Vol.78] New Diamond Transistor Exhibits High Hole Mobility
- Magazine
- Collection
- Research Highlights
- Creator
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International Center for Materials Nanoarchitectonics (WPI-MANA) (author) (Search by this author)National Institute for Materials Science
- Keyword
- diamond, field-effect transistor, hexagonal boron nitride, mobility, hydrogen-terminated, wide bandgap, hBN, graphite, hBN/h-BN
- Date published
- 2022-07-29
- Updated at
- 2023-12-26 21:47:16 +0900
[Research Highlights Vol.69] Direct Growth of Germanene Marks a Major Step for Electronic Device Fabrication
- Magazine
- Collection
- Research Highlights
- Creator
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International Center for Materials Nanoarchitectonics (WPI-MANA) (author) (Search by this author)National Institute for Materials Science
- Keyword
- density functional theory, germanene, graphene, hexagonal boron nitride, Raman spectroscopy, van der Waals materials, Ag(111), silicene
- Date published
- 2021-07-15
- Updated at
- 2023-12-26 21:46:24 +0900
[Research Highlights Vol.61] First Fabrication of fBBLG/hBN Superlattices
- Magazine
- Collection
- Research Highlights
- Creator
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International Center for Materials Nanoarchitectonics (WPI-MANA) (author) (Search by this author)National Institute for Materials Science
- Keyword
- two-dimensional material, van der Waals heterostructure, graphene, hexagonal boron nitride, moiré superlattice, transport property
- Date published
- 2020-08-26
- Updated at
- 2023-12-26 21:47:57 +0900
Dielectric strength weakening of hexagonal boron nitride nanosheets under mechanical stress
- Journal article
- Creator
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;Bingjie Wang (author) (Search by this author);Chuanli Yu (author) (Search by this author);Yifan Jiang (author) (Search by this author);Chong Tian (author) (Search by this author);Jiamin Tian (author) (Search by this author);Shuo Li (author) (Search by this author);Zheng Fang (author) (Search by this author);Menglan Li (author) (Search by this author);Weilong Wu (author) (Search by this author);Zhaohe Dai (author) (Search by this author)Takashi Taniguchi (author) (Search by this author)National Institute for Materials Science
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Kenji Watanabe (author) (Search by this author)National Institute for Materials Science
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;Qing Chen (author) (Search by this author)Xianlong Wei (author) (Search by this author) - Keyword
- hexagonal boron nitride, dielectric strength , mechanical stress
- Date published
- 2025-08-29
- Updated at
- 2026-02-17 08:30:11 +0900
A high-mobility electronic system at an electrolyte-gated oxide surface
- Journal article
- Creator
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;Patrick Gallagher (author) (Search by this author);Menyoung Lee (author) (Search by this author);Trevor A. Petach (author) (Search by this author);Sam W. Stanwyck (author) (Search by this author);James R. Williams (author) (Search by this author)Kenji Watanabe (author) (Search by this author)National Institute for Materials Science
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Takashi Taniguchi (author) (Search by this author)National Institute for Materials Science
;
David Goldhaber-Gordon (author) (Search by this author)
- Keyword
- Electrolyte gating, carrier density, hexagonal boron nitride
- Date published
- 2015-03-12
- Updated at
- 2025-02-28 08:30:38 +0900
Direct exciton emission from atomically thin transition metal dichalcogenide heterostructures near the lifetime limit
- Journal article
- Creator
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;Jakob Wierzbowski (author) (Search by this author);Julian Klein (author) (Search by this author);Florian Sigger (author) (Search by this author);Christian Straubinger (author) (Search by this author);Malte Kremser (author) (Search by this author)Takashi Taniguchi (author) (Search by this author)National Institute for Materials Science
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Kenji Watanabe (author) (Search by this author)National Institute for Materials Science
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;Ursula Wurstbauer (author) (Search by this author);Alexander W. Holleitner (author) (Search by this author);Michael Kaniber (author) (Search by this author);Kai Müller (author) (Search by this author)Jonathan J. Finley (author) (Search by this author)
- Keyword
- Transition metal dichalcogenides, hexagonal boron nitride, excitons
- Date published
- 2017-09-28
- Updated at
- 2025-02-28 16:31:06 +0900
Chemically Tailored Semiconductor Moiré Superlattices of Janus Heterobilayers
- Journal article
- Creator
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;Wenjin Zhang (author) (Search by this author);Zheng Liu (author) (Search by this author);Hiroshi Nakajo (author) (Search by this author);Soma Aoki (author) (Search by this author);Haonan Wang (author) (Search by this author);Yanlin Wang (author) (Search by this author);Yanlin Gao (author) (Search by this author);Mina Maruyama (author) (Search by this author);Takuto Kawakami (author) (Search by this author);Yasuyuki Makino (author) (Search by this author);Masahiko Kaneda (author) (Search by this author);Tongmin Chen (author) (Search by this author);Kohei Aso (author) (Search by this author);Tomoya Ogawa (author) (Search by this author);Takahiko Endo (author) (Search by this author);Yusuke Nakanishi (author) (Search by this author)Kenji Watanabe (author) (Search by this author)National Institute for Materials Science
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Takashi Taniguchi (author) (Search by this author)National Institute for Materials Science
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;Yoshifumi Oshima (author) (Search by this author);Yukiko Yamada‐Takamura (author) (Search by this author);Mikito Koshino (author) (Search by this author);Susumu Okada (author) (Search by this author);Kazunari Matsuda (author) (Search by this author);Toshiaki Kato (author) (Search by this author)Yasumitsu Miyata (author) (Search by this author)
- Keyword
- Single-layer graphene, molecular beam epitaxy, hexagonal boron nitride
- Date published
- 2024-03-02
- Updated at
- 2025-02-23 22:45:58 +0900
All About the Interface: Do Residual Contaminants at A High‐Quality h‐BN Monolayer Perylene Diimide Interface Cause Charge Trapping?
- Journal article
- Creator
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;Lukas Renn (author) (Search by this author);Lisa S. Walter (author) (Search by this author)Kenji Watanabe (author) (Search by this author)National Institute for Materials Science
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Takashi Taniguchi (author) (Search by this author)National Institute for Materials Science
;
R. Thomas Weitz (author) (Search by this author)
- Keyword
- Charge transport, organic semiconducting crystals, hexagonal boron nitride
- Date published
- 2022-01-29
- Updated at
- 2025-02-26 08:30:49 +0900
Novel Mixed-Dimensional hBN-Passivated Silicon Nanowire Reconfigurable Field Effect Transistors: Fabrication and Characterization
- Journal article
- Creator
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;Sayantan Ghosh (author) (Search by this author);Muhammad Bilal Khan (author) (Search by this author);Phanish Chava (author) (Search by this author)Kenji Watanabe (author) (Search by this author)National Institute for Materials Science
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Takashi Taniguchi (author) (Search by this author)National Institute for Materials Science
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;Slawomir Prucnal (author) (Search by this author);René Hübner (author) (Search by this author);Thomas Mikolajick (author) (Search by this author);Artur Erbe (author) (Search by this author)Yordan M. Georgiev (author) (Search by this author)
- Keyword
- Reconfigurable field effect transistor, silicon nanowire, hexagonal boron nitride
- Date published
- 2023-08-30
- Updated at
- 2025-03-01 08:30:31 +0900
Phonon-enhanced nonlinearities in hexagonal boron nitride
- Journal article
- Creator
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;Jared S. Ginsberg (author) (Search by this author);M. Mehdi Jadidi (author) (Search by this author);Jin Zhang (author) (Search by this author);Cecilia Y. Chen (author) (Search by this author);Nicolas Tancogne-Dejean (author) (Search by this author);Sang Hoon Chae (author) (Search by this author);Gauri N. Patwardhan (author) (Search by this author);Lede Xian (author) (Search by this author)Kenji Watanabe (author) (Search by this author)National Institute for Materials Science
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Takashi Taniguchi (author) (Search by this author)National Institute for Materials Science
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;James Hone (author) (Search by this author);Angel Rubio (author) (Search by this author)Alexander L. Gaeta (author) (Search by this author)
- Keyword
- Polar crystals, optical nonlinearities, hexagonal boron nitride
- Date published
- 2023-11-24
- Updated at
- 2025-02-11 12:30:15 +0900