Magazine [Research Highlights Vol.78] New Diamond Transistor Exhibits High Hole Mobility

International Center for Materials Nanoarchitectonics (WPI-MANA) (National Institute for Materials ScienceROR)

[Vol. 78]New Diamond Transistor Exhibits High Hole Mobility_WPI-MANA.pdf
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Research Highlights

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International Center for Materials Nanoarchitectonics (WPI-MANA). [Research Highlights Vol.78] New Diamond Transistor Exhibits High Hole Mobility. https://doi.org/10.48505/nims.3818

Description:

(abstract)

A research team at WPI-MANA, using a new fabrication technique, has developed a diamond field-effect transistor with high hole mobility, which can lead to reduced conduction loss and higher operational speeds.

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Keyword: diamond, field-effect transistor, hexagonal boron nitride, mobility, hydrogen-terminated, wide bandgap, hBN, graphite, hBN/h-BN

Date published: 2022-07-29

Publisher: National Institute for Materials Science

Journal:

  • MANA E-BULLETIN vol. 78

Funding:

Manuscript type: Not a journal article

MDR DOI: https://doi.org/10.48505/nims.3818

First published URL: https://www.nims.go.jp/mana/research/highlights/vol78.html

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Updated at: 2023-12-26 21:47:16 +0900

Published on MDR: 2022-12-16 13:23:50 +0900

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