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Research Highlights

引用

説明:

A research team at WPI-MANA, using a new fabrication technique, has developed a diamond field-effect transistor with high hole mobility, which can lead to reduced conduction loss and higher operational speeds.

権利情報:

• In Copyright
  In Copyright

キーワード: diamond, field-effect transistor, hexagonal boron nitride, mobility, hydrogen-terminated, wide bandgap, hBN, graphite, hBN/h-BN

刊行年月日: 2022-07-29

出版者: National Institute for Materials Science

掲載誌:

• MANA E-BULLETIN vol. 78

研究助成金:

原稿種別: 論文以外のデータ

MDR DOI: https://doi.org/10.48505/nims.3818

公開URL: https://www.nims.go.jp/mana/research/highlights/vol78.html

関連資料:

• refers
• (dataset)
• https://doi.org/10.1038/s41928-021-00689-4

その他の識別子:

連絡先:

更新時刻: 2023-12-26 21:47:16 +0900

MDRでの公開時刻: 2022-12-16 13:23:50 +0900