雑誌 [Research Highlights Vol.69] Direct Growth of Germanene Marks a Major Step for Electronic Device Fabrication

International Center for Materials Nanoarchitectonics (WPI-MANA) (National Institute for Materials ScienceROR)

[Vol. 69]Direct Growth of Germanene Marks a Major Step for Electronic Device Fabrication_ WPI-MANA.pdf
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Research Highlights

引用
International Center for Materials Nanoarchitectonics (WPI-MANA). [Research Highlights Vol.69] Direct Growth of Germanene Marks a Major Step for Electronic Device Fabrication. https://doi.org/10.48505/nims.3809

説明:

(abstract)

A team at MANA has succeeded in the direct growth of h-BN-capped germanene on the surface of silver Ag(111). They believe this could be a promising technique for the fabrication of germanene-based electronic devices in the future.

権利情報:

キーワード: density functional theory, germanene, graphene, hexagonal boron nitride, Raman spectroscopy, van der Waals materials, Ag(111), silicene

刊行年月日: 2021-07-15

出版者: National Institute for Materials Science

掲載誌:

  • MANA E-BULLETIN vol. 69

研究助成金:

原稿種別: 出版者版 (Version of record)

MDR DOI: https://doi.org/10.48505/nims.3809

公開URL: https://www.nims.go.jp/mana/research/highlights/vol69.html

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更新時刻: 2023-12-26 21:46:24 +0900

MDRでの公開時刻: 2022-12-16 13:34:25 +0900

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