Magazine [Research Highlights Vol.69] Direct Growth of Germanene Marks a Major Step for Electronic Device Fabrication

International Center for Materials Nanoarchitectonics (WPI-MANA) (National Institute for Materials ScienceROR)

[Vol. 69]Direct Growth of Germanene Marks a Major Step for Electronic Device Fabrication_ WPI-MANA.pdf
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Research Highlights

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International Center for Materials Nanoarchitectonics (WPI-MANA). [Research Highlights Vol.69] Direct Growth of Germanene Marks a Major Step for Electronic Device Fabrication. https://doi.org/10.48505/nims.3809

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(abstract)

A team at MANA has succeeded in the direct growth of h-BN-capped germanene on the surface of silver Ag(111). They believe this could be a promising technique for the fabrication of germanene-based electronic devices in the future.

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Keyword: density functional theory, germanene, graphene, hexagonal boron nitride, Raman spectroscopy, van der Waals materials, Ag(111), silicene

Date published: 2021-07-15

Publisher: National Institute for Materials Science

Journal:

  • MANA E-BULLETIN vol. 69

Funding:

Manuscript type: Publisher's version (Version of record)

MDR DOI: https://doi.org/10.48505/nims.3809

First published URL: https://www.nims.go.jp/mana/research/highlights/vol69.html

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Updated at: 2023-12-26 21:46:24 +0900

Published on MDR: 2022-12-16 13:34:25 +0900

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