Keyword: GaN
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10 records found.

1-s2.0-S1369800125003439-main.pdf
A three-step surface treatment and its impacts on electrical properties of c- and m-face GaN/Al2O3 MOS structures
Journal article
Creator
Masahiro Hara (author) (Search by this author)
ORCID ; ORCID SAMURAI ; ORCID SAMURAI ;
Tomomi Sawada (author) (Search by this author)
;
Manami Miyamoto (author) (Search by this author)
;
Hiromi Miura (author) (Search by this author)
;
Tsunenobu Kimoto (author) (Search by this author)
;
Yasuo Koide (author) (Search by this author)
Keyword
GaN
Date published
2025-05-07
Updated at
2025-05-08 12:30:16 +0900
JAP135(2024)185701_GaNMGRCWalukiewiczTribute.pdf
Impacts of vacancy complexes on the room-temperature photoluminescence lifetime of state-of-the-art GaN substrates, epitaxial layers, and Mg-implanted layers
Journal article
Creator
Shigefusa F. Chichibu (author) (Search by this author)
Institute of Multidisciplinary Research for Advanced Materials, Tohoku University
;
Kohei Shima (author) (Search by this author)
Institute of Multidisciplinary Research for Advanced Materials, Tohoku University
;
Akira Uedono (author) (Search by this author)
Department of Pure and Applied Sciences, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan
;
Shoji Ishibashi (author) (Search by this author)
AIST
;
Hiroko Iguchi (author) (Search by this author)
TOYOTA CENTRAL R&D LABS., INC.
;
Tetsuo Narita (author) (Search by this author)
TOYOTA CENTRAL R&D LABS., INC.
;
Keita Kataoka (author) (Search by this author)
TOYOTA CENTRAL R&D LABS., INC.
;
Ryo Tanaka (author) (Search by this author)
Fuji Electric Corporation
;
Shinya Takashima (author) (Search by this author)
Fuji Electric Corporation
;
Katsunori Ueno (author) (Search by this author)
Fuji Electric Corporation
;
Masaharu Edo (author) (Search by this author)
Fuji Electric Corporation
;
Hirotaka Watanabe (author) (Search by this author)
Institute of Materials and Systems for Sustainability, Nagoya University
;
Atsushi Tanaka (author) (Search by this author)
Institute of Materials and Systems for Sustainability, Nagoya University
;
Yoshio Honda (author) (Search by this author)
Institute of Materials and Systems for Sustainability, Nagoya University
;
Jun Suda (author) (Search by this author)
Institute of Materials and Systems for Sustainability, Nagoya University
;
Hiroshi Amano (author) (Search by this author)
Institute of Materials and Systems for Sustainability, Nagoya University
;
Tetsu Kachi (author) (Search by this author)
Institute of Materials and Systems for Sustainability, Nagoya University
;
Toshihide Nabatame (author) (Search by this author)
Research Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science
ORCID SAMURAI ;
Yoshihiro Irokawa (author) (Search by this author)
Research Center for Electronic and Optical Materials/Functional Materials Field/Next-generation Semiconductor Group, National Institute for Materials Science
ORCID SAMURAI ;
Yasuo Koide (author) (Search by this author)
Research Center for Electronic and Optical Materials/Functional Materials Field/Next-generation Semiconductor Group, National Institute for Materials Science
ORCID SAMURAI
Keyword
GaN
Date published
2024-05-14
Updated at
2024-05-09 16:30:16 +0900
Okumura_2023_Jpn._J._Appl._Phys._62_064001 (1).pdf
Degradation of vertical GaN diodes during proton and xenon-ion irradiation
Journal article
Creator
Hironori Okumura (author) (Search by this author)
;
Yohei Ogawara (author) (Search by this author)
;
Manabu Togawa (author) (Search by this author)
;
Masaya Miyahara (author) (Search by this author)
;
Tadaaki Isobe (author) (Search by this author)
;
Kosuke Itabashi (author) (Search by this author)
;
Jiro Nishinaga (author) (Search by this author)
;
Masataka Imura (author) (Search by this author)
National Institute for Materials Science
ORCID SAMURAI
Keyword
Schottky barrier diode, MOCVD, Vertical-type PN junction diode, Proton, Xe, Radiation irradiations, GaN
Date published
2023-06-01
Updated at
2024-08-24 08:30:18 +0900
Final manuscript.pdf
Vacancy-type defects introduced by mechanical polishing in ammonothermal GaN studied by a monoenergetic positron beam
Journal article
Creator
Akira Uedono (author) (Search by this author)
ORCID ;
Shoji Ishibashi (author) (Search by this author)
ORCID ;
Kohei Shima (author) (Search by this author)
ORCID ;
Shigefusa F. Chichibu (author) (Search by this author)
;
Kacper Sierakowski (author) (Search by this author)
ORCID ;
Makoto Oishi (author) (Search by this author)
ORCID ;
Noriyuki Okada (author) (Search by this author)
ORCID ; ORCID SAMURAI ;
Michal Bockowski (author) (Search by this author)
ORCID
Keyword
Mechanical polishing, GaN, Vacancy, Defect, Positron annihilation
Date published
2026-04-12
Updated at
2026-04-20 08:56:29 +0900
Irokawa_2024_ECS_J._Solid_State_Sci._Technol._13_045002.pdf
Pt/GaN Schottky barrier height lowering by incorporated hydrogen
Journal article
Creator
色川 芳宏 (author) (Search by this author)
Research Center for Electronic and Optical Materials/Functional Materials Field/Next-generation Semiconductor Group, National Institute for Materials Science
ORCID SAMURAI ;
大井 暁彦 (author) (Search by this author)
Research Network and Facility Services Division/Materials Fabrication and Analysis Platform/Nanofabrication Unit, National Institute for Materials Science
ORCID SAMURAI ;
生田目 俊秀 (author) (Search by this author)
Research Center for Materials Nanoarchitectonics (MANA)/Quantum Materials Field/Thin Film Electronics Group, National Institute for Materials Science
ORCID SAMURAI ;
小出 康夫 (author) (Search by this author)
Research Center for Electronic and Optical Materials/Functional Materials Field/Next-generation Semiconductor Group, National Institute for Materials Science
ORCID SAMURAI
Keyword
GaN, hydrogen, Schottky barrier height
Date published
2024-04-01
Updated at
2024-04-10 16:30:21 +0900
Irokawa_2026_ECS_J._Solid_State_Sci._Technol._15_055002.pdf
Investigation of Deep States in GaN Metal-Oxide-Semiconductor Interfaces
Journal article
Creator
ORCID SAMURAI ;
Mamoru Usami (author) (Search by this author)
ORCID ; ORCID SAMURAI ; ORCID SAMURAI ; ORCID SAMURAI ; ORCID SAMURAI
Keyword
GaN
Date published
2026-05-01
Updated at
2026-05-13 10:14:20 +0900
Shimada_transistor_nanoXRD-JAP-250704rev2-marked.pdf
In situ nanobeam x-ray diffraction of local strain in AlGaN/GaN high-electron-mobility transistors under operating condition
Journal article
Creator
Akihiro Shimada (author) (Search by this author)
;
Haruna Shiomi (author) (Search by this author)
;
Tetsuya Tohei (author) (Search by this author)
ORCID ; ORCID SAMURAI ;
Masaya Yamaguchi (author) (Search by this author)
;
Junpei Yamamoto (author) (Search by this author)
ORCID ;
Takeaki Hamachi (author) (Search by this author)
ORCID ;
Yasuhiko Imai (author) (Search by this author)
ORCID ;
Kazushi Sumitani (author) (Search by this author)
;
Shigeru Kimura (author) (Search by this author)
ORCID ;
Shota Kaneki (author) (Search by this author)
ORCID ;
Tamotsu Hashizume (author) (Search by this author)
ORCID ;
Akira Sakai (author) (Search by this author)
ORCID
Keyword
GaN, HEMT, Strain, In situ
Date published
2025-08-21
Updated at
2025-08-23 08:30:23 +0900
dfac008.pdf
Classification for transmission electron microscope images from different amorphous states using persistent homology
Journal article
Creator
Fumihiko Uesugi (author) (Search by this author)
National Institute for Materials Science
ORCID SAMURAI ;
Masashi Ishii (author) (Search by this author)
National Institute for Materials Science
ORCID SAMURAI
Keyword
TEM image simulation, GaN, persistent homology, Amorphous structure
Date published
2022-06-06
Updated at
2024-07-04 16:32:11 +0900
Hamachi 2024 JAP GaN dislocation nanoXRD Na-flux HVPE MDR.pdf
Analysis of local strain fields around individual threading dislocations in GaN substrates by nanobeam x-ray diffraction
Journal article
Creator
T. Hamachi (author) (Search by this author)
ORCID ;
T. Tohei (author) (Search by this author)
ORCID ; ORCID SAMURAI ;
S. Usami (author) (Search by this author)
ORCID ;
M. Imanishi (author) (Search by this author)
;
Y. Mori (author) (Search by this author)
;
K. Sumitani (author) (Search by this author)
;
Y. Imai (author) (Search by this author)
ORCID ;
S. Kimura (author) (Search by this author)
ORCID ;
A. Sakai (author) (Search by this author)
ORCID
Keyword
GaN, Dislocation, SPring-8
Date published
2024-06-14
Updated at
2024-12-05 12:47:52 +0900
paper.pdf
Formation of GaN mesas with reverse-tapered edge structures on a lattice-matched AlInN layer for a positive beveled edge termination
Journal article
Creator
Takayoshi Oshima (author) (Search by this author)
Research Center for Electronic and Optical Materials/Functional Materials Field/Ultra-wide Bandgap Semiconductors Group, National Institute for Materials Science
ORCID SAMURAI ;
Masataka Imura (author) (Search by this author)
Research Center for Electronic and Optical Materials/Functional Materials Field/Next-generation Semiconductor Group, National Institute for Materials Science
ORCID SAMURAI ;
Yuichi Oshima (author) (Search by this author)
Research Center for Electronic and Optical Materials/Functional Materials Field/Ultra-wide Bandgap Semiconductors Group, National Institute for Materials Science
ORCID SAMURAI
Keyword
GaN, AlInN, etching, positive bevel edge termination
Date published
2024-08-01
Updated at
2024-08-02 12:30:52 +0900