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In this study, a three-step surface treatment, composed of SiO2 deposition,
subsequent annealing, and SiO2 removal, is adopted for the fabrication of
c- and m-plane GaN/Al2O3 MOS structures, and the impact of the pro
posed process on electrical properties and its crystal face dependence are
systematically investigated. While no significant changes are observed after
the proposed surface treatment for m-face GaN, an identical process causes
changes in the properties of c-face GaN MOS structures: an about 0.2V
lower flat-band voltage (VFB) and an about 0.2eV higher conduction band
offset, associated with a change in the thickness or crystalline quality of a
gallium oxide (GaOx) layer on the c-face GaN surface. The modified energy
band alignment leads to a reduced gate leakage current, reducing the VFB
drift after high-field positive bias stress (4.5MV/cm) almost by half only for
c-face GaN MOS structures. The fact that even an identical process has a
crystal face-dependent impact on the properties of GaN MOS structures is
important in developing the fabrication process of GaN planer and trench
MOSFETs.

権利情報:

• Creative Commons BY Attribution 4.0 International
  

キーワード: GaN

刊行年月日: 2025-05-07

出版者: Elsevier BV

掲載誌:

• Materials Science in Semiconductor Processing (ISSN: 13698001) vol. 196 109606

研究助成金:

• Ministry of Education, Culture, Sports, Science and Technology JPJ009777

原稿種別: 出版者版 (Version of record)

MDR DOI:

公開URL: https://doi.org/10.1016/j.mssp.2025.109606

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更新時刻: 2025-05-08 12:30:16 +0900

MDRでの公開時刻: 2025-05-08 12:24:21 +0900