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In this study, a three-step surface treatment, composed of SiO2 deposition,
subsequent annealing, and SiO2 removal, is adopted for the fabrication of
c- and m-plane GaN/Al2O3 MOS structures, and the impact of the pro
posed process on electrical properties and its crystal face dependence are
systematically investigated. While no significant changes are observed after
the proposed surface treatment for m-face GaN, an identical process causes
changes in the properties of c-face GaN MOS structures: an about 0.2V
lower flat-band voltage (VFB) and an about 0.2eV higher conduction band
offset, associated with a change in the thickness or crystalline quality of a
gallium oxide (GaOx) layer on the c-face GaN surface. The modified energy
band alignment leads to a reduced gate leakage current, reducing the VFB
drift after high-field positive bias stress (4.5MV/cm) almost by half only for
c-face GaN MOS structures. The fact that even an identical process has a
crystal face-dependent impact on the properties of GaN MOS structures is
important in developing the fabrication process of GaN planer and trench
MOSFETs.

Rights:

• Creative Commons BY Attribution 4.0 International
  

Keyword: GaN

Date published: 2025-05-07

Publisher: Elsevier BV

Journal:

• Materials Science in Semiconductor Processing (ISSN: 13698001) vol. 196 109606

Funding:

• Ministry of Education, Culture, Sports, Science and Technology JPJ009777

Manuscript type: Publisher's version (Version of record)

MDR DOI:

First published URL: https://doi.org/10.1016/j.mssp.2025.109606

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Updated at: 2025-05-08 12:30:16 +0900

Published on MDR: 2025-05-08 12:24:21 +0900