論文 In situ nanobeam x-ray diffraction of local strain in AlGaN/GaN high-electron-mobility transistors under operating condition

Akihiro Shimada ; Haruna Shiomi ; Tetsuya Tohei ORCID ; Yusuke Hayashi SAMURAI ORCID ; Masaya Yamaguchi ; Junpei Yamamoto ORCID ; Takeaki Hamachi ORCID ; Yasuhiko Imai ORCID ; Kazushi Sumitani ; Shigeru Kimura ORCID ; Shota Kaneki ORCID ; Tamotsu Hashizume ORCID ; Akira Sakai ORCID

Shimada_transistor_nanoXRD-JAP-250704rev2-marked.pdf
Download file (638KB)
Download as zip (599KB)
コレクション

引用
Akihiro Shimada, Haruna Shiomi, Tetsuya Tohei, Yusuke Hayashi, Masaya Yamaguchi, Junpei Yamamoto, Takeaki Hamachi, Yasuhiko Imai, Kazushi Sumitani, Shigeru Kimura, Shota Kaneki, Tamotsu Hashizume, Akira Sakai. In situ nanobeam x-ray diffraction of local strain in AlGaN/GaN high-electron-mobility transistors under operating condition. Journal of Applied Physics. 2025, 138 (7), 075701. https://doi.org/10.1063/5.0275921

説明:

(abstract)

We combined synchrotron radiation nanobeam X-ray diffraction technique with the pump-probe method to perform in-situ measurements of local strain in a normally-ON AlGaN/GaN metal-oxide-semiconductor high electron mobility transistor device under transistor operation. The c-axis strain in the AlGaN barrier layer within the gate region exhibited a clear position dependence, increasing as the gate voltage was increased in the negative direction and as the measurement position moved from the center of the gate electrode towards the drain-side gate edge. Based on the characteristics of the measured c-axis and a-axis strains, we successfully extracted not only the strain component due to the inverse piezoelectric effect but also the thermal expansion strain component, using the constitutive equation for elastic bodies.

権利情報:

キーワード: GaN, HEMT, Strain, In situ

刊行年月日: 2025-08-21

出版者: AIP Publishing

掲載誌:

  • Journal of Applied Physics (ISSN: 00218979) vol. 138 issue. 7 075701

研究助成金:

  • Japan Society for the Promotion of Science JP16H06421
  • Japan Society for the Promotion of Science JP22KK0055
  • Japan Society for the Promotion of Science JP23H01447
  • Japan Society for the Promotion of Science JP23H05457
  • Murata Science and Education Foundation
  • Japan Society for the Promotion of Science JP16H06423

原稿種別: 著者最終稿 (Accepted manuscript)

MDR DOI: https://doi.org/10.48505/nims.5662

公開URL: https://doi.org/10.1063/5.0275921

関連資料:

その他の識別子:

連絡先:

更新時刻: 2025-08-23 08:30:23 +0900

MDRでの公開時刻: 2025-08-23 08:17:05 +0900

ファイル名 サイズ
ファイル名 Shimada_transistor_nanoXRD-JAP-250704rev2-marked.pdf (サムネイル)
application/pdf 		サイズ 638KB 詳細