<i>In situ</i> nanobeam x-ray diffraction of local strain in AlGaN/GaN high-electron-mobility transistors under operating condition

Akihiro Shimada; Haruna Shiomi; Tetsuya Tohei; Yusuke Hayashi; Masaya Yamaguchi; Junpei Yamamoto; Takeaki Hamachi; Yasuhiko Imai; Kazushi Sumitani; Shigeru Kimura; Shota Kaneki; Tamotsu Hashizume; Akira Sakai

doi:10.1063/5.0275921

Journal article In situ nanobeam x-ray diffraction of local strain in AlGaN/GaN high-electron-mobility transistors under operating condition

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Akihiro Shimada, Haruna Shiomi, Tetsuya Tohei, Yusuke Hayashi, Masaya Yamaguchi, Junpei Yamamoto, Takeaki Hamachi, Yasuhiko Imai, Kazushi Sumitani, Shigeru Kimura, Shota Kaneki, Tamotsu Hashizume, Akira Sakai. In situ nanobeam x-ray diffraction of local strain in AlGaN/GaN high-electron-mobility transistors under operating condition. Journal of Applied Physics. 2025, 138 (7), 075701. https://doi.org/10.1063/5.0275921

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We combined synchrotron radiation nanobeam X-ray diffraction technique with the pump-probe method to perform in-situ measurements of local strain in a normally-ON AlGaN/GaN metal-oxide-semiconductor high electron mobility transistor device under transistor operation. The c-axis strain in the AlGaN barrier layer within the gate region exhibited a clear position dependence, increasing as the gate voltage was increased in the negative direction and as the measurement position moved from the center of the gate electrode towards the drain-side gate edge. Based on the characteristics of the measured c-axis and a-axis strains, we successfully extracted not only the strain component due to the inverse piezoelectric effect but also the thermal expansion strain component, using the constitutive equation for elastic bodies.

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