Article In situ nanobeam x-ray diffraction of local strain in AlGaN/GaN high-electron-mobility transistors under operating condition

Akihiro Shimada ; Haruna Shiomi ; Tetsuya Tohei ORCID ; Yusuke Hayashi SAMURAI ORCID ; Masaya Yamaguchi ; Junpei Yamamoto ORCID ; Takeaki Hamachi ORCID ; Yasuhiko Imai ORCID ; Kazushi Sumitani ; Shigeru Kimura ORCID ; Shota Kaneki ORCID ; Tamotsu Hashizume ORCID ; Akira Sakai ORCID

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Akihiro Shimada, Haruna Shiomi, Tetsuya Tohei, Yusuke Hayashi, Masaya Yamaguchi, Junpei Yamamoto, Takeaki Hamachi, Yasuhiko Imai, Kazushi Sumitani, Shigeru Kimura, Shota Kaneki, Tamotsu Hashizume, Akira Sakai. In situ nanobeam x-ray diffraction of local strain in AlGaN/GaN high-electron-mobility transistors under operating condition. Journal of Applied Physics. 2025, 138 (7), 075701. https://doi.org/10.1063/5.0275921

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(abstract)

We combined synchrotron radiation nanobeam X-ray diffraction technique with the pump-probe method to perform in-situ measurements of local strain in a normally-ON AlGaN/GaN metal-oxide-semiconductor high electron mobility transistor device under transistor operation. The c-axis strain in the AlGaN barrier layer within the gate region exhibited a clear position dependence, increasing as the gate voltage was increased in the negative direction and as the measurement position moved from the center of the gate electrode towards the drain-side gate edge. Based on the characteristics of the measured c-axis and a-axis strains, we successfully extracted not only the strain component due to the inverse piezoelectric effect but also the thermal expansion strain component, using the constitutive equation for elastic bodies.

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Keyword: GaN, HEMT, Strain, In situ

Date published: 2025-08-21

Publisher: AIP Publishing

Journal:

  • Journal of Applied Physics (ISSN: 00218979) vol. 138 issue. 7 075701

Funding:

  • Japan Society for the Promotion of Science JP16H06421
  • Japan Society for the Promotion of Science JP22KK0055
  • Japan Society for the Promotion of Science JP23H01447
  • Japan Society for the Promotion of Science JP23H05457
  • Murata Science and Education Foundation
  • Japan Society for the Promotion of Science JP16H06423

Manuscript type: Author's version (Accepted manuscript)

MDR DOI: https://doi.org/10.48505/nims.5662

First published URL: https://doi.org/10.1063/5.0275921

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Updated at: 2025-08-23 08:30:23 +0900

Published on MDR: 2025-08-23 08:17:05 +0900

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