High-performance β-Ga2O3 Schottky barrier diodes and metal-semiconductor field-effect transistors on a high doping level epitaxial layer
- Journal article
- Creator
-
;Qihao Zhang (author) (Search by this author)Jiangwei Liu (author) (Search by this author)National Institute for Materials Science
;
;Chunming Tu (author) (Search by this author);Dongyuan Zhai (author) (Search by this author);Min He (author) (Search by this author)Jiwu Lu (author) (Search by this author) - Keyword
- Ga2O3, Transistor
- Date published
- 2023-01-03
- Updated at
- 2025-01-04 16:30:50 +0900
Comparative Study of the Optical Properties of α‐, β‐, and κ‐Ga2O3
- Journal article
- Creator
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Lewis T. Penman (author) (Search by this author)
https://orcid.org/0000-0002-0147-9995
(unauthenticated)
;
;Zak M. Johnston (author) (Search by this author)Paul R. Edwards (author) (Search by this author)
https://orcid.org/0000-0001-7671-7698
(unauthenticated)
;
Yuichi Oshima (author) (Search by this author)
;
;Clifford McAleese (author) (Search by this author)Piero Mazzolini (author) (Search by this author)
https://orcid.org/0000-0003-2092-5265
(unauthenticated)
;
Matteo Bosi (author) (Search by this author)
https://orcid.org/0000-0001-8992-0249
(unauthenticated)
;
Luca Seravalli (author) (Search by this author)
https://orcid.org/0000-0003-2784-1785
(unauthenticated)
;
;Roberto Fornari (author) (Search by this author)Robert W. Martin (author) (Search by this author)
https://orcid.org/0000-0002-6119-764X
(unauthenticated)
;
Fabien C.‐P. Massabuau (author) (Search by this author)
https://orcid.org/0000-0003-1008-1652
(unauthenticated)
- Keyword
- Ga2O3
- Date published
- 2025-02-12
- Updated at
- 2025-08-18 16:30:52 +0900
Fabrication of coherent γ-Al2O3/Ga2O3 superlattices on MgAl2O4 substrates
- Journal article
- Creator
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;Yuji Kato (author) (Search by this author)Masataka Imura (author) (Search by this author)National Institute for Materials Science
;
Yoshiko Nakayama (author) (Search by this author)National Institute for Materials Science
;
Masaki Takeguchi (author) (Search by this author)National Institute for Materials Science
;
Takayoshi Oshima (author) (Search by this author)National Institute for Materials Science
- Keyword
- Ga2O3, Superlattice
- Date published
- 2019-06-01
- Updated at
- 2024-01-05 22:11:34 +0900
Lattice-matched (Al x Sc y Ga1− x − y )2O3/ β -Ga2O3 heterostructures with widely tunable bandgap
- Journal article
- Creator
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Kazuki Koreishi (author) (Search by this author)
https://orcid.org/0009-0000-1580-8262
(unauthenticated)
;
Kodai Niitsu (author) (Search by this author)
;
Takuto Soma (author) (Search by this author)
https://orcid.org/0000-0001-8685-9606
(unauthenticated)
;
Kohei Yoshimatsu (author) (Search by this author)
https://orcid.org/0000-0001-9288-068X
(unauthenticated)
;
Akira Ohtomo (author) (Search by this author)
https://orcid.org/0000-0003-0300-4712
(unauthenticated)
- Keyword
- Ga2O3, Wide bandgap, Bandgap engineering
- Date published
- 2026-07-06
- Updated at
- 2026-08-06 09:39:59 +0900
Epitaxial Lateral Overgrowth of c-plane α-Ga2O3 using a stripe mask with ultra-narrow windows
- Journal article
- Creator
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Yuichi Oshima (author) (Search by this author)Research Center for Electronic and Optical Materials/Functional Materials Field/Ultra-wide Bandgap Semiconductors Group, National Institute for Materials Science
;
Takashi Shinohe (author) (Search by this author)FLOSFIA INC.
- Keyword
- Ga2O3, dislocation, HVPE, ELO
- Date published
- 2025-05-19
- Updated at
- 2025-05-21 16:30:09 +0900
Step-and-terrace surface formation on (001) β-Ga2O3 by wet etching using 2.38 wt% tetramethylammonium hydroxide (TMAH) lithographic developer
- Journal article
- Creator
-
Takayoshi Oshima (author) (Search by this author)
- Keyword
- Ga2O3, TMAH, Wet etching
- Date published
- 2025-08-01
- Updated at
- 2025-08-18 16:30:36 +0900
Materials issues and devices of α- and β-Ga2O3
- Journal article
- Creator
-
;Elaheh Ahmadi (author) (Search by this author)Yuichi Oshima (author) (Search by this author)National Institute for Materials Science
- Keyword
- Ga2O3, power device, epitaxy
- Date published
- 2019-10-28
- Updated at
- 2024-01-29 15:08:11 +0900
Epitaxial relationship of NiO on (-102) β-Ga2O3
- Journal article
- Creator
-
Takayoshi Oshima (author) (Search by this author)Research Center for Electronic and Optical Materials, National Institute for Materials Science
;
Shinji Nakagomi (author) (Search by this author)Faculty of Science and Engineering, Ishinomaki Senshu University
- Keyword
- Ga2O3, NiO, epitaxial relationship
- Date published
- 2023-12-01
- Updated at
- 2024-11-23 16:30:35 +0900
High Schottky barrier formation in tilted-dipole PdCoO2/ β -Ga2O3 (001) interfaces
- Journal article
- Creator
-
Takayuki Harada (author) (Search by this author)
;
Takuro Nagai (author) (Search by this author)
;
Kohei Sasaki (author) (Search by this author)
https://orcid.org/0000-0002-8923-7703
(unauthenticated)
- Keyword
- Thin film, Ga2O3, Delafossite, Power devices, Schottky
- Date published
- 2026-06-01
- Updated at
- 2026-06-10 14:51:59 +0900
Halide vapor phase epitaxy of a thick c -plane α-Ga2O3 film on a high-quality α-Cr2O3/sapphire template
- Journal article
- Creator
-
Yuichi Oshima (author) (Search by this author)
;
Takayoshi Oshima (author) (Search by this author)
;
Shiyu Xiao (author) (Search by this author)
https://orcid.org/0009-0007-0382-0396
(unauthenticated)
;
;Kazuto Murakami (author) (Search by this author);Katsuhiro Imai (author) (Search by this author)Takahiro Tomita (author) (Search by this author)
- Keyword
- Ga2O3, HVPE, Cr2O3
- Date published
- 2026-02-21
- Updated at
- 2026-02-18 16:30:15 +0900