9 records found.
Materials issues and devices of α- and β-Ga2O3
- Journal article
- Creator
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;Elaheh Ahmadi (author) (Search by this author)Yuichi Oshima (author) (Search by this author)National Institute for Materials Science
- Keyword
- Ga2O3, power device, epitaxy
- Date published
- 2019-10-28
- Updated at
- 2024-01-29 15:08:11 +0900
Photoelectron holographic study for atomic site occupancy for Si dopants in Si-doped κ-Ga2O3(001)
- Journal article
- Creator
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Yuhua Tsai (author) (Search by this author)Research Center for Electronic and Optical Materials/Functional Materials Field/Nano Electronics Device Materials Group, National Institute for Materials Science
;
;Yusuke Hashimoto (author) (Search by this author)NAIST;ZeXu Sun (author) (Search by this author)NAIST;Takuya Moriki (author) (Search by this author)NAIST;Takashi Tadamura (author) (Search by this author)NAISTTakahiro Nagata (author) (Search by this author)Research Center for Electronic and Optical Materials/Functional Materials Field/Nano Electronics Device Materials Group, National Institute for Materials Science
;
;Piero Mazzolini (author) (Search by this author)University of Parma;Antonella Parisini (author) (Search by this author)University of Parma;Matteo Bosi (author) (Search by this author)IMEM-CNR;Luca Seravalli (author) (Search by this author)IMEM-CNR;Tomohiro Matsushita (author) (Search by this author)NAISTYoshiyuki Yamashita (author) (Search by this author)Research Center for Electronic and Optical Materials/Functional Materials Field/Nano Electronics Device Materials Group, National Institute for Materials Science
- Keyword
- Ga2O3, κ-Ga2O3
- Date published
- 2024-04-03
- Updated at
- 2025-03-07 12:30:11 +0900
Luminescence properties of dislocations in α-Ga2O3
- Journal article
- Creator
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Mugove Maruzane (author) (Search by this author)
https://orcid.org/0009-0004-9207-0424
(unauthenticated)
;
Yuichi Oshima (author) (Search by this author)
;
Olha Makydonska (author) (Search by this author)
https://orcid.org/0009-0008-5562-2137
(unauthenticated)
;
Paul R Edwards (author) (Search by this author)
https://orcid.org/0000-0001-7671-7698
(unauthenticated)
;
Robert W Martin (author) (Search by this author)
https://orcid.org/0000-0002-6119-764X
(unauthenticated)
;
Fabien C-P Massabuau (author) (Search by this author)
https://orcid.org/0000-0003-1008-1652
(unauthenticated)
- Keyword
- Ga2O3, dislocation
- Date published
- 2025-01-20
- Updated at
- 2024-11-13 08:31:40 +0900
Halide vapor phase epitaxy of a thick c -plane α-Ga2O3 film on a high-quality α-Cr2O3/sapphire template
- Journal article
- Creator
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Yuichi Oshima (author) (Search by this author)
;
Takayoshi Oshima (author) (Search by this author)
;
Shiyu Xiao (author) (Search by this author)
https://orcid.org/0009-0007-0382-0396
(unauthenticated)
;
;Kazuto Murakami (author) (Search by this author);Katsuhiro Imai (author) (Search by this author)Takahiro Tomita (author) (Search by this author)
- Keyword
- Ga2O3, HVPE, Cr2O3
- Date published
- 2026-02-21
- Updated at
- 2026-02-18 16:30:15 +0900
Comparative Study of the Optical Properties of α‐, β‐, and κ‐Ga2O3
- Journal article
- Creator
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Lewis T. Penman (author) (Search by this author)
https://orcid.org/0000-0002-0147-9995
(unauthenticated)
;
;Zak M. Johnston (author) (Search by this author)Paul R. Edwards (author) (Search by this author)
https://orcid.org/0000-0001-7671-7698
(unauthenticated)
;
Yuichi Oshima (author) (Search by this author)
;
;Clifford McAleese (author) (Search by this author)Piero Mazzolini (author) (Search by this author)
https://orcid.org/0000-0003-2092-5265
(unauthenticated)
;
Matteo Bosi (author) (Search by this author)
https://orcid.org/0000-0001-8992-0249
(unauthenticated)
;
Luca Seravalli (author) (Search by this author)
https://orcid.org/0000-0003-2784-1785
(unauthenticated)
;
;Roberto Fornari (author) (Search by this author)Robert W. Martin (author) (Search by this author)
https://orcid.org/0000-0002-6119-764X
(unauthenticated)
;
Fabien C.‐P. Massabuau (author) (Search by this author)
https://orcid.org/0000-0003-1008-1652
(unauthenticated)
- Keyword
- Ga2O3
- Date published
- 2025-02-12
- Updated at
- 2025-08-18 16:30:52 +0900
Plasma-free dry etching of (001) β-Ga2O3 substrates by HCl gas
- Journal article
- Creator
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Takayoshi Oshima (author) (Search by this author)National Institute for Materials Science
;
Yuichi Oshima (author) (Search by this author)National Institute for Materials Science
- Keyword
- Ga2O3, etching, HCl
- Date published
- 2023-04-17
- Updated at
- 2024-05-29 08:30:12 +0900
Using selective-area growth and selective-area etching on (−102) β-Ga2O3 substrates to fabricate plasma-damage-free vertical fins and trenches
- Journal article
- Creator
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Takayoshi Oshima (author) (Search by this author)Research Center for Electronic and Optical Materials, National Institute for Materials Science
;
Yuichi Oshima (author) (Search by this author)Research Center for Electronic and Optical Materials, National Institute for Materials Science
- Keyword
- Ga2O3, (-102), selective area growth, selective area etching
- Date published
- 2024-01-22
- Updated at
- 2025-01-25 12:30:12 +0900
Mapping primary crystallographic planes in β -Ga 2 O 3 based on a pseudo-cubic oxygen sublattice
- Journal article
- Creator
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Takayoshi Oshima (author) (Search by this author)
- Keyword
- Ga2O3, fcc
- Date published
- 2026-02-16
- Updated at
- 2026-02-18 16:30:08 +0900
Epitaxial relationship of NiO on (-102) β-Ga2O3
- Journal article
- Creator
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Takayoshi Oshima (author) (Search by this author)Research Center for Electronic and Optical Materials, National Institute for Materials Science
;
Shinji Nakagomi (author) (Search by this author)Faculty of Science and Engineering, Ishinomaki Senshu University
- Keyword
- Ga2O3, NiO, epitaxial relationship
- Date published
- 2023-12-01
- Updated at
- 2024-11-23 16:30:35 +0900