86 records found. Displaying records 51 to 60.
Electron trapping/detrapping at oxygen vacancies and imprint evolution in La-doped Hf0.5Zr0.5O2 ferroelectric capacitors probed by hard x-ray photoelectron spectroscopy
- Journal article
- Creator
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W. Hamouda (author) (Search by this author)
https://orcid.org/0000-0002-7055-7264
(unauthenticated)
;
Y. Yamashita (author) (Search by this author)
;
S. Ueda (author) (Search by this author)
;
S. Matzen (author) (Search by this author)
https://orcid.org/0000-0002-4244-6516
(unauthenticated)
;
O. Renault (author) (Search by this author)
https://orcid.org/0000-0002-0683-9590
(unauthenticated)
;
F. Mehmood (author) (Search by this author)
https://orcid.org/0000-0002-9530-380X
(unauthenticated)
;
T. Mikolajick (author) (Search by this author)
https://orcid.org/0000-0003-3814-0378
(unauthenticated)
;
U. Schroeder (author) (Search by this author)
https://orcid.org/0000-0002-6824-2386
(unauthenticated)
;
N. Barrett (author) (Search by this author)
https://orcid.org/0000-0002-8228-0805
(unauthenticated)
- Keyword
- Hf0.5Zr0.5O2, HAXPES, operando
- Date published
- 2025-11-03
- Updated at
- 2025-11-13 12:30:12 +0900
Hydrogen-terminated and oxygen-terminated diamond metal-oxide-semiconductor field-effect transistors
- Journal article
- Creator
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Jiangwei Liu (author) (Search by this author)
- Keyword
- diamond
- Date published
- 2025-12-31
- Updated at
- 2025-10-31 12:30:17 +0900
Suppression of High Threshold Voltage for Boron-Doped Diamond MOSFETs
- Journal article
- Creator
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Jiangwei Liu (author) (Search by this author)Research Center for Electronic and Optical Materials, National Institute for Materials Science (NIMS)
;
Tokuyuki Teraji (author) (Search by this author)Research Center for Electronic and Optical Materials, National Institute for Materials Science (NIMS)
;
Bo Da (author) (Search by this author)Center for Basic Research on Materials, National Institute for Materials Science (NIMS)
;
Yasuo Koide (author) (Search by this author)National Institute for Materials Science (NIMS)
- Keyword
- Boron-doped diamond
- Date published
- 2024-01-30
- Updated at
- 2024-03-19 16:57:34 +0900
Probing of Polarization Reversal in Ferroelectric (Al,Sc)N Films Using Single‐ and Tri‐Layered Structures With Different Sc/(Al+Sc) Ratio
- Journal article
- Creator
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;Shinnosuke Yasuoka (author) (Search by this author)Takao Shimizu (author) (Search by this author)National Institute for Materials Science
;
;Kazuki Okamoto (author) (Search by this author);Nana Sun (author) (Search by this author);Soshun Doko (author) (Search by this author);Naoko Matsui (author) (Search by this author);Toshikazu Irisawa (author) (Search by this author);Koji Tsunekawa (author) (Search by this author);Alexei Gruverman (author) (Search by this author)Hiroshi Funakubo (author) (Search by this author)
- Keyword
- Ferroelectric, (Al,Sc)N Films, Wurtzite
- Date published
- 2024-10-13
- Updated at
- 2025-12-18 16:26:41 +0900
Conductance Switching in an Asymmetric Single-Molecule Junction
- Journal article
- Creator
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Masato Takei (author) (Search by this author)
https://orcid.org/0000-0002-3522-0033
(unauthenticated)
;
;Akira Takatsuki (author) (Search by this author)Katsunori Wakabayashi (author) (Search by this author)
https://orcid.org/0000-0002-9147-9939
(unauthenticated)
;
Satoshi Kaneko (author) (Search by this author)
https://orcid.org/0000-0002-0351-6681
(unauthenticated)
;
Hiroshi Suga (author) (Search by this author)
https://orcid.org/0000-0003-4333-4898
(unauthenticated)
;
Yasuhisa Naitoh (author) (Search by this author)
https://orcid.org/0000-0003-2431-9625
(unauthenticated)
;
Kazuhito Tsukagoshi (author) (Search by this author)
- Keyword
- fullerene, Single-molecule device, transition voltage spectroscopy, single-level transport model, C60 pyrrolidine tris-acid
- Date published
- 2025-10-13
- Updated at
- 2025-11-06 12:30:22 +0900
Diamond field-effect transistors
- Journal article
- Creator
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Yamaguchi Takahide (author) (Search by this author)Research Center for Materials Nanoarchitectonics (MANA)/Quantum Materials Field/Surface Quantum Phase Materials Group, National Institute for Materials Science
- Keyword
- Diamond, Transistor, Field effect
- Date published
- Updated at
- 2025-09-03 12:31:04 +0900
Self-aligned gate electrode for hydrogen-terminated diamond field-effect transistors with a hexagonal boron nitride gate insulator
- Journal article
- Creator
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Yosuke Sasama (author) (Search by this author)
;
Takuya Iwasaki (author) (Search by this author)
;
Mohammad Monish (author) (Search by this author)
;
Kenji Watanabe (author) (Search by this author)
;
Takashi Taniguchi (author) (Search by this author)
;
Yamaguchi Takahide (author) (Search by this author)
- Keyword
- Hydrogen-terminated diamond, Field-effect transistors, hexagonal boron nitride, Self-aligned gate electrode
- Date published
- 2024-08-26
- Updated at
- 2024-09-12 16:30:45 +0900
Plasma-free anisotropic selective-area etching of β-Ga 2 O 3 using forming gas under atmospheric pressure
- Journal article
- Creator
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Takayoshi Oshima (author) (Search by this author)
;
Rie Togashi (author) (Search by this author)
https://orcid.org/0000-0002-9467-0755
(unauthenticated)
;
Yuichi Oshima (author) (Search by this author)
- Keyword
- Ga2O3, forming gas, anisotropic etching, plasma-free process
- Date published
- 2024-12-31
- Updated at
- 2024-07-31 12:30:20 +0900
Electrical Properties of Boron-Doped Diamond MOSFETs With Ozone as Oxygen Precursor for Al2O3 Deposition
- Journal article
- Creator
-
Jiangwei Liu (author) (Search by this author)National Institute for Materials Science
;
Tokuyuki Teraji (author) (Search by this author)National Institute for Materials Science
;
Bo Da (author) (Search by this author)National Institute for Materials Science
;
Yasuo Koide (author) (Search by this author)National Institute for Materials Science
- Keyword
- Boron-doped diamond, MOS capacitor, MOSFET
- Date published
- 2023-03-16
- Updated at
- 2024-01-05 22:13:56 +0900
High Doping Activation (≥1020 cm−3) in Tensile-Strained n‑Ge Alloys Achieved by High-Speed Continuous-Wave Laser Annealing
- Journal article
- Creator
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Rahmat Hadi Saputro (author) (Search by this author)Research Center for Materials Nanoarchitectonics (MANA)/Quantum Materials Field/Nanostructured Semiconducting Materials Group, National Institute for Materials Science
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;Tatsuro Maeda (author) (Search by this author)AIST;Kaoru Toko (author) (Search by this author)Graduate School of Pure and Applied Sciences University of TsukubaRyo Matsumura (author) (Search by this author)Research Center for Materials Nanoarchitectonics (MANA)/Quantum Materials Field/Nanostructured Semiconducting Materials Group, National Institute for Materials Science
;
Naoki Fukata (author) (Search by this author)Research Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science
- Keyword
- germanium, thin film, polycrystalline growth, laser annealing, impurity doping
- Date published
- 2024-06-25
- Updated at
- 2025-06-03 08:30:17 +0900