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説明:

Electrical properties of boron-doped diamond (B-diamond) metal-oxide-semiconductor (MOS) capacitors and MOS field-effect transistors (MOSFETs) are enhanced by depositing the Al₂O₃ gate insulator with an ozone precursor. There are no residual capacitance and improved negative flat band voltage shift for the capacitance-voltage curve of the Al₂O₃ (ozone)/B-diamond MOS capacitor. The MOSFET operates well with the on/off ratio of around 108. It can still operate well even after annealing at 500 ℃ for as long as 10 hours with its on/off ratio larger than 106. Improvement of electrical properties for the Al₂O₃ (ozone)/B-diamond MOS capacitor and MOSFET is possibly ascribed to the modification of surface defects for the B-diamond and the enhancement of film quality for the Al₂O₃.

権利情報:

• In Copyright
  

キーワード: Boron-doped diamond, MOS capacitor, MOSFET

刊行年月日: 2023-03-16

出版者: Institute of Electrical and Electronics Engineers (IEEE)

掲載誌:

• IEEE TRANSACTIONS ON ELECTRON DEVICES (ISSN: 00189383) vol. 70 issue. 5 p. 2199-2203

研究助成金:

• MEXT JP20H00313
• MEXT JP20H02187

原稿種別: 査読前原稿 (Author's original)

MDR DOI: https://doi.org/10.48505/nims.4247

公開URL: https://doi.org/10.1109/TED.2023.3256349

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更新時刻: 2024-01-05 22:13:56 +0900

MDRでの公開時刻: 2023-10-14 13:30:10 +0900