論文 High Doping Activation (≥1020 cm−3) in Tensile-Strained n‑Ge Alloys Achieved by High-Speed Continuous-Wave Laser Annealing

Rahmat Hadi Saputro SAMURAI ORCID (Research Center for Materials Nanoarchitectonics (MANA)/Quantum Materials Field/Nanostructured Semiconducting Materials Group, National Institute for Materials ScienceROR) ; Tatsuro Maeda (AIST) ; Kaoru Toko (Graduate School of Pure and Applied Sciences University of Tsukuba) ; Ryo Matsumura SAMURAI ORCID (Research Center for Materials Nanoarchitectonics (MANA)/Quantum Materials Field/Nanostructured Semiconducting Materials Group, National Institute for Materials ScienceROR) ; Naoki Fukata SAMURAI ORCID (Research Center for Materials Nanoarchitectonics (MANA), National Institute for Materials ScienceROR)

Manuscript_revised.docx
Download file (3.95MB)
Download as zip (3.89MB)
コレクション

引用
Rahmat Hadi Saputro, Tatsuro Maeda, Kaoru Toko, Ryo Matsumura, Naoki Fukata. High Doping Activation (≥1020 cm−3) in Tensile-Strained n‑Ge Alloys Achieved by High-Speed Continuous-Wave Laser Annealing. ACS Applied Electronic Materials. 2024, 6 (6), . https://doi.org/10.1021/acsaelm.4c00399

説明:

(abstract)

Germanium-based materials are essential for the integration of Group IV optoelectronics in silicon devices. In addition to tensile strain, high n-type doping is critical, as it provides abundant carriers for recombination, potentially enabling higher photoemissions from Ge-based materials. We report here record-high 68% doping activation on n-Ge with ≥1020 cm−3 carrier density. This study centers on Sb-doped n-type Ge-on-insulator thin films with Si or Sn alloying grown using high-speed continuous-wave laser annealing (CWLA).
Crystal mapping revealed the growth of polycrystalline n-GeSn and n-GeSi thin films with grain sizes up to 4 μm in diameter. Micro-PL measurements showed the PL intensity of n-Ge to be enhanced by the alloying of Sn and Si, with peak intensity 1.5 and 3 times higher for n-GeSn and n-GeSi, respectively. Raman peak red shift and broadening are observed in the samples, indicating high tensile strain and n-type doping. The measured carrier density of CWLA-grown films aligns well with the PL intensity trend, suggesting the process has promise for achieving electrically improved Ge-based thin films.

権利情報:

  • In Copyright
    This document is the Accepted Manuscript version of a Published Work that appeared in final form in ACS Applied Electronic Materials, copyright © 2024 American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see https://doi.org/10.1021/acsaelm.4c00399

キーワード: germanium, thin film, polycrystalline growth, laser annealing, impurity doping

刊行年月日: 2024-06-25

出版者: American Chemical Society

掲載誌:

  • ACS Applied Electronic Materials (ISSN: 26376113) vol. 6 issue. 6

研究助成金:

  • JSPS JP20K14796, JP23K13370 (光電融合LSIへ向けた絶縁膜上におけるGe系光学材料の結晶成長と光電デバイス応用)

原稿種別: 著者最終稿 (Accepted manuscript)

MDR DOI: https://doi.org/10.48505/nims.4767

公開URL: https://doi.org/10.1021/acsaelm.4c00399

関連資料:

その他の識別子:

連絡先:

更新時刻: 2025-06-03 08:30:17 +0900

MDRでの公開時刻: 2025-06-03 08:23:33 +0900

ファイル名 サイズ
ファイル名 Manuscript_revised.docx (サムネイル)
application/vnd.openxmlformats-officedocument.wordprocessingml.document 		サイズ 3.95MB 詳細