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Germanium-based materials are essential for the integration of Group IV optoelectronics in silicon devices. In addition to tensile strain, high n-type doping is critical, as it provides abundant carriers for recombination, potentially enabling higher photoemissions from Ge-based materials. We report here record-high 68% doping activation on n-Ge with ≥1020 cm−3 carrier density. This study centers on Sb-doped n-type Ge-on-insulator thin films with Si or Sn alloying grown using high-speed continuous-wave laser annealing (CWLA).
Crystal mapping revealed the growth of polycrystalline n-GeSn and n-GeSi thin films with grain sizes up to 4 μm in diameter. Micro-PL measurements showed the PL intensity of n-Ge to be enhanced by the alloying of Sn and Si, with peak intensity 1.5 and 3 times higher for n-GeSn and n-GeSi, respectively. Raman peak red shift and broadening are observed in the samples, indicating high tensile strain and n-type doping. The measured carrier density of CWLA-grown films aligns well with the PL intensity trend, suggesting the process has promise for achieving electrically improved Ge-based thin films.

権利情報:

• In Copyright
  

  This document is the Accepted Manuscript version of a Published Work that appeared in final form in ACS Applied Electronic Materials, copyright © 2024 American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see https://doi.org/10.1021/acsaelm.4c00399

キーワード: germanium, thin film, polycrystalline growth, laser annealing, impurity doping

刊行年月日: 2024-06-25

出版者: American Chemical Society

掲載誌:

• ACS Applied Electronic Materials (ISSN: 26376113) vol. 6 issue. 6

研究助成金:

• JSPS JP20K14796, JP23K13370 (光電融合LSIへ向けた絶縁膜上におけるGe系光学材料の結晶成長と光電デバイス応用)

原稿種別: 著者最終稿 (Accepted manuscript)

MDR DOI: https://doi.org/10.48505/nims.4767

公開URL: https://doi.org/10.1021/acsaelm.4c00399

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更新時刻: 2025-06-03 08:30:17 +0900

MDRでの公開時刻: 2025-06-03 08:23:33 +0900