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説明:

In this work, we focus on resolving one of great issues of high threshold voltage (VTH) values for the boron-doped diamond (B-diamond) metal-oxide-semiconductor field-effect transistors (MOSFETs) reported by now. The VTH for the B-diamond MOSFETs can be further decreased by reducing B-diamond epitaxial layer thickness, boron doping concentration, and thickness of oxide insulator. Three MOSFETs with different device structures are fabricated on the same oxygen-terminated B-diamond channel. The VTH values are lower than 3.4 V with the lowest one of 0.8 V. They are much lower than the previous reports values.

権利情報:

• In Copyright
  J. Liu, T. Teraji, B. Da and Y. Koide, "Suppression of High Threshold Voltage for Boron-Doped Diamond MOSFETs," in IEEE Transactions on Electron Devices, vol. 71, no. 3, pp. 1764-1768, March 2024, doi: 10.1109/TED.2024.3356468.

キーワード: Boron-doped diamond

刊行年月日: 2024-01-30

出版者: Institute of Electrical and Electronics Engineers (IEEE)

掲載誌:

• IEEE Transactions on Electron Devices (ISSN: 00189383) vol. 71 issue. 3 p. 1764-1768

研究助成金:

• JSPS KAKENHI Projects JP23K03966
• JSPS KAKENHI Projects 20H05661
• JSPS KAKENHI Projects JP20H00313
• MEXT Q-LEAP JPMXS0118068379
• JST CREST JPMJCR1773
• JST Moonshot Research and Development JPMJMS2062
• MIC Research and Development for Construction of a Global Quantum Cryptography Network JPMI00316
• MEXT ARIM JPMXP1223NM5006

原稿種別: 査読前原稿 (Author's original)

MDR DOI: https://doi.org/10.48505/nims.4442

公開URL: https://doi.org/10.1109/ted.2024.3356468

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更新時刻: 2024-03-19 16:57:34 +0900

MDRでの公開時刻: 2024-03-19 16:57:34 +0900