Journal article Suppression of High Threshold Voltage for Boron-Doped Diamond MOSFETs
Jiangwei Liu (author) (Search by this author)
ORCID https://orcid.org/0000-0003-2580-7401
Research Center for Electronic and Optical Materials, National Institute for Materials Science (NIMS)
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ORCID SAMURAI ;
Tokuyuki Teraji (author) (Search by this author)
ORCID https://orcid.org/0000-0002-7731-0547
Research Center for Electronic and Optical Materials, National Institute for Materials Science (NIMS)
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Bo Da (author) (Search by this author)
ORCID https://orcid.org/0000-0002-0785-8662
Center for Basic Research on Materials, National Institute for Materials Science (NIMS)
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Yasuo Koide (author) (Search by this author)
ORCID https://orcid.org/0000-0001-8321-9822
National Institute for Materials Science (NIMS)
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Citation
Jiangwei Liu, Tokuyuki Teraji, Bo Da, Yasuo Koide. Suppression of High Threshold Voltage for Boron-Doped Diamond MOSFETs. IEEE Transactions on Electron Devices. 2024, 71 (3), 1764-1768. https://doi.org/10.1109/ted.2024.3356468
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Description:

(abstract)

In this work, we focus on resolving one of great issues of high threshold voltage (VTH) values for the boron-doped diamond (B-diamond) metal-oxide-semiconductor field-effect transistors (MOSFETs) reported by now. The VTH for the B-diamond MOSFETs can be further decreased by reducing B-diamond epitaxial layer thickness, boron doping concentration, and thickness of oxide insulator. Three MOSFETs with different device structures are fabricated on the same oxygen-terminated B-diamond channel. The VTH values are lower than 3.4 V with the lowest one of 0.8 V. They are much lower than the previous reports values.

Rights:

  • In Copyright

    J. Liu, T. Teraji, B. Da and Y. Koide, "Suppression of High Threshold Voltage for Boron-Doped Diamond MOSFETs," in IEEE Transactions on Electron Devices, vol. 71, no. 3, pp. 1764-1768, March 2024, doi: 10.1109/TED.2024.3356468.

Keyword: Boron-doped diamond

Date published: 2024-01-30

Publisher: Institute of Electrical and Electronics Engineers (IEEE)

Journal:

  • IEEE Transactions on Electron Devices (ISSN: 00189383) vol. 71 issue. 3 p. 1764-1768

Funding:

  • JSPS KAKENHI Projects JP23K03966
  • JSPS KAKENHI Projects 20H05661
  • JSPS KAKENHI Projects JP20H00313
  • MEXT Q-LEAP JPMXS0118068379
  • JST CREST JPMJCR1773
  • JST Moonshot Research and Development JPMJMS2062
  • MIC Research and Development for Construction of a Global Quantum Cryptography Network JPMI00316
  • MEXT ARIM JPMXP1223NM5006

Manuscript type: Author's version (Submitted manuscript)

MDR DOI: https://doi.org/10.48505/nims.4442

First published URL: https://doi.org/10.1109/ted.2024.3356468

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Updated at: 2024-03-19 16:57:34 +0900

Published on MDR: 2024-03-19 16:57:34 +0900

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