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ジャーナル論文(15)
書籍(1)
キーワード
Ga2O3 (16)
HVPE (3)
TMAH (3)
dislocation (2)
wet etching (2)
(-102) (1)
Cr2O3 (1)
Delafossite (1)
ELO (1)
HCl (1)
(more)
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ファイル種別: application/pdf
キーワード: Ga2O3
全ての絞り込みを解除
16 件のレコードが見つかりました。
Wet etching of (−102) β-Ga
2
O
3
with tetramethylammonium hydroxide (TMAH)
ジャーナル論文
著者
Takayoshi Oshima
(author) (
この著者で検索
)
https://orcid.org/0000-0001-8550-9735
NIMS Researchers Directory SAMURAI
Takayoshi Oshima
キーワード
Ga2O3
,
wet etching
,
TMAH
刊行年月日
2026-12-31
更新時刻
2026-06-11 15:11:01 +0900
Materials issues and devices of α- and β-Ga2O3
ジャーナル論文
著者
Elaheh Ahmadi
(author) (
この著者で検索
)
Elaheh Ahmadi
;
Yuichi Oshima
(author) (
この著者で検索
)
https://orcid.org/0000-0001-8293-4891
National Institute for Materials Science
NIMS Researchers Directory SAMURAI
Yuichi Oshima
キーワード
Ga2O3
,
power device
,
epitaxy
刊行年月日
2019-10-28
更新時刻
2024-01-29 15:08:11 +0900
Using selective-area growth and selective-area etching on (−102) β-Ga2O3 substrates to fabricate plasma-damage-free vertical fins and trenches
ジャーナル論文
著者
Takayoshi Oshima
(author) (
この著者で検索
)
https://orcid.org/0000-0001-8550-9735
National Institute for Materials Science Research Center for Electronic and Optical Materials
NIMS Researchers Directory SAMURAI
Takayoshi Oshima
;
Yuichi Oshima
(author) (
この著者で検索
)
https://orcid.org/0000-0001-8293-4891
National Institute for Materials Science Research Center for Electronic and Optical Materials
NIMS Researchers Directory SAMURAI
Yuichi Oshima
キーワード
Ga2O3
,
(-102)
,
selective area growth
,
selective area etching
刊行年月日
2024-01-22
更新時刻
2025-01-25 12:30:12 +0900
Luminescence properties of dislocations in α-Ga
2
O
3
ジャーナル論文
著者
Mugove Maruzane
(author) (
この著者で検索
)
https://orcid.org/0009-0004-9207-0424
(unauthenticated)
Mugove Maruzane
;
Yuichi Oshima
(author) (
この著者で検索
)
https://orcid.org/0000-0001-8293-4891
NIMS Researchers Directory SAMURAI
Yuichi Oshima
;
Olha Makydonska
(author) (
この著者で検索
)
https://orcid.org/0009-0008-5562-2137
(unauthenticated)
Olha Makydonska
;
Paul R Edwards
(author) (
この著者で検索
)
https://orcid.org/0000-0001-7671-7698
(unauthenticated)
Paul R Edwards
;
Robert W Martin
(author) (
この著者で検索
)
https://orcid.org/0000-0002-6119-764X
(unauthenticated)
Robert W Martin
;
Fabien C-P Massabuau
(author) (
この著者で検索
)
https://orcid.org/0000-0003-1008-1652
(unauthenticated)
Fabien C-P Massabuau
キーワード
Ga2O3
,
dislocation
刊行年月日
2025-01-20
更新時刻
2024-11-13 08:31:40 +0900
Plasma-free dry etching of (001) β-Ga2O3 substrates by HCl gas
ジャーナル論文
著者
Takayoshi Oshima
(author) (
この著者で検索
)
https://orcid.org/0000-0001-8550-9735
National Institute for Materials Science
NIMS Researchers Directory SAMURAI
Takayoshi Oshima
;
Yuichi Oshima
(author) (
この著者で検索
)
https://orcid.org/0000-0001-8293-4891
National Institute for Materials Science
NIMS Researchers Directory SAMURAI
Yuichi Oshima
キーワード
Ga2O3
,
etching
,
HCl
刊行年月日
2023-04-17
更新時刻
2024-05-29 08:30:12 +0900
Comparative Study of the Optical Properties of α‐, β‐, and κ‐Ga
2
O
3
ジャーナル論文
著者
Lewis T. Penman
(author) (
この著者で検索
)
https://orcid.org/0000-0002-0147-9995
(unauthenticated)
Lewis T. Penman
;
Zak M. Johnston
(author) (
この著者で検索
)
Zak M. Johnston
;
Paul R. Edwards
(author) (
この著者で検索
)
https://orcid.org/0000-0001-7671-7698
(unauthenticated)
Paul R. Edwards
;
Yuichi Oshima
(author) (
この著者で検索
)
https://orcid.org/0000-0001-8293-4891
NIMS Researchers Directory SAMURAI
Yuichi Oshima
;
Clifford McAleese
(author) (
この著者で検索
)
Clifford McAleese
;
Piero Mazzolini
(author) (
この著者で検索
)
https://orcid.org/0000-0003-2092-5265
(unauthenticated)
Piero Mazzolini
;
Matteo Bosi
(author) (
この著者で検索
)
https://orcid.org/0000-0001-8992-0249
(unauthenticated)
Matteo Bosi
;
Luca Seravalli
(author) (
この著者で検索
)
https://orcid.org/0000-0003-2784-1785
(unauthenticated)
Luca Seravalli
;
Roberto Fornari
(author) (
この著者で検索
)
Roberto Fornari
;
Robert W. Martin
(author) (
この著者で検索
)
https://orcid.org/0000-0002-6119-764X
(unauthenticated)
Robert W. Martin
;
Fabien C.‐P. Massabuau
(author) (
この著者で検索
)
https://orcid.org/0000-0003-1008-1652
(unauthenticated)
Fabien C.‐P. Massabuau
キーワード
Ga2O3
刊行年月日
2025-02-12
更新時刻
2025-08-18 16:30:52 +0900
Halide Vapor Phase Epitaxy 2—Heteroepitaxial Growth of α- and ɛ-Ga2O3
書籍
著者
大島祐一
(author) (
この著者で検索
)
https://orcid.org/0000-0001-8293-4891
National Institute for Materials Science Research Center for Functional Materials/Optical Materials Field/Optical Single Crystals Group
NIMS Researchers Directory SAMURAI
大島祐一
キーワード
Ga2O3
,
HVPE
刊行年月日
2020-04-24
更新時刻
2024-01-30 10:29:29 +0900
Halide vapor phase epitaxy of a thick
c
-plane α-Ga2O3 film on a high-quality α-Cr2O3/sapphire template
ジャーナル論文
著者
Yuichi Oshima
(author) (
この著者で検索
)
https://orcid.org/0000-0001-8293-4891
NIMS Researchers Directory SAMURAI
Yuichi Oshima
;
Takayoshi Oshima
(author) (
この著者で検索
)
https://orcid.org/0000-0001-8550-9735
NIMS Researchers Directory SAMURAI
Takayoshi Oshima
;
Shiyu Xiao
(author) (
この著者で検索
)
https://orcid.org/0009-0007-0382-0396
(unauthenticated)
Shiyu Xiao
;
Kazuto Murakami
(author) (
この著者で検索
)
Kazuto Murakami
;
Katsuhiro Imai
(author) (
この著者で検索
)
Katsuhiro Imai
;
Takahiro Tomita
(author) (
この著者で検索
)
Takahiro Tomita
キーワード
Ga2O3
,
HVPE
,
Cr2O3
刊行年月日
2026-02-21
更新時刻
2026-02-18 16:30:15 +0900
Plasma-free anisotropic selective-area etching of β-Ga
2
O
3
using forming gas under atmospheric pressure
ジャーナル論文
著者
Takayoshi Oshima
(author) (
この著者で検索
)
https://orcid.org/0000-0001-8550-9735
NIMS Researchers Directory SAMURAI
Takayoshi Oshima
;
Rie Togashi
(author) (
この著者で検索
)
https://orcid.org/0000-0002-9467-0755
(unauthenticated)
Rie Togashi
;
Yuichi Oshima
(author) (
この著者で検索
)
https://orcid.org/0000-0001-8293-4891
NIMS Researchers Directory SAMURAI
Yuichi Oshima
キーワード
Ga2O3
,
forming gas
,
anisotropic etching
,
plasma-free process
刊行年月日
2024-12-31
更新時刻
2024-07-31 12:30:20 +0900
Step-and-terrace surface formation on (001)
β
-Ga
2
O
3
by wet etching using 2.38 wt% tetramethylammonium hydroxide (TMAH) lithographic developer
ジャーナル論文
著者
Takayoshi Oshima
(author) (
この著者で検索
)
https://orcid.org/0000-0001-8550-9735
NIMS Researchers Directory SAMURAI
Takayoshi Oshima
キーワード
Ga2O3
,
TMAH
,
Wet etching
刊行年月日
2025-08-01
更新時刻
2025-08-18 16:30:36 +0900
キーワード
Ga2O3
(16)
HVPE
(3)
TMAH
(3)
dislocation
(2)
wet etching
(2)
(-102)
(1)
Cr2O3
(1)
Delafossite
(1)
ELO
(1)
HCl
(1)
MEMS
(1)
Power devices
(1)
Schottky
(1)
Thin film
(1)
Transistor
(1)
Wet etching
(1)
anisotropic etching
(1)
b-Ga2O3
(1)
dopant
(1)
epitaxy
(1)
etching
(1)
fcc
(1)
forming gas
(1)
plasma-free process
(1)
power device
(1)
selective area etching
(1)
selective area growth
(1)
RDEメタデータ定義
RDE送り状
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