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Article(9)
Keyword
α-Ga2O3 (9)
HVPE (6)
dislocation (5)
ELO (4)
epitaxy (1)
etching (1)
power device (1)
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Keyword: α-Ga2O3
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9 records found.
Phase-controlled epitaxial lateral overgrowth of α-Ga2O3 by halide vapor phase epitaxy
Article
Creator
Yuichi Oshima
; Katsuaki Kawara ; Takayoshi Oshima ; Mitsuru Okigawa ; Takashi Shinohe
Keyword
α-Ga2O3
,
ELO
,
HVPE
Date published
2020-02-01
Updated at
2024-01-22 09:41:33 +0900
Rapid growth of α-Ga2O3 by HCl-boosted halide vapor phase epitaxy and effect of precursor supply conditions on crystal properties
Article
Creator
Yuichi Oshima ; Katsuaki Kawara ; Takayoshi Oshima ; Mitsuru Okigawa ; Takashi Shinohe
Keyword
α-Ga2O3
,
HVPE
Date published
2020-05-01
Updated at
2024-01-22 09:40:57 +0900
Elimination of threading dislocations in α-Ga2O3 by double layered epitaxial lateral overgrowth
Article
Creator
Katsuaki Kawara ;
Yuichi Oshima
; Mitsuru Okigawa ; Takashi Shinohe
Keyword
α-Ga2O3
,
dislocation
,
ELO
Date published
2020-07-01
Updated at
2024-01-22 09:40:04 +0900
Visualization of threading dislocations in an α-Ga2O3 epilayer by HCl gas etching
Article
Creator
Yuichi Oshima
; Shingo Yagyu ; Takashi Shinohe
Keyword
α-Ga2O3
,
dislocation
,
etching
Date published
2021-10-19
Updated at
2024-01-22 09:38:31 +0900
Epitaxial lateral overgrowth of r-plane α-Ga2O3 with stripe masks along -12-10>
Article
Creator
Yuichi Oshima
; Shingo Yagyu ; Takashi Shinohe
Keyword
α-Ga2O3
,
HVPE
,
dislocation
,
ELO
Date published
2021-11-07
Updated at
2024-01-30 16:49:49 +0900
Reduction of dislocation density in α-Ga2O3 epilayers via rapid growth at low temperatures by halide vapor phase epitaxy
Article
Creator
Yuichi Oshima
; Hiroyuki Ando ; Takashi Shinohe
Keyword
α-Ga2O3
,
dislocation
,
HVPE
Date published
2023-06-01
Updated at
2024-06-23 08:30:11 +0900
Halide Vapor Phase Epitaxy of twin-free a-Ga2O3 on sapphire (0001) substrates
Article
Creator
Yuichi Oshima
; Encarnación G. Víllora ;
Kiyoshi Shimamura
Keyword
α-Ga2O3
,
HVPE
Date published
2015-05-01
Updated at
2024-01-22 09:34:09 +0900
Epitaxial lateral overgrowth of α-Ga2O3 by halide vapor phase epitaxy
Article
Creator
Y. Oshima
; K. Kawara ; T. Shinohe ; T. Hitora ; M. Kasu ; S. Fujita
Keyword
α-Ga2O3
,
HVPE
,
ELO
,
dislocation
Date published
2019-02-01
Updated at
2024-01-29 16:48:15 +0900
Progress and challenges in the development of ultra-wide bandgap semiconductor α-Ga2O3 toward realizing power device applications
Article
Creator
Yuichi Oshima
; Elaheh Ahmadi
Keyword
α-Ga2O3
,
epitaxy
,
power device
Date published
2022-12-26
Updated at
2024-01-29 15:45:56 +0900
Keyword
α-Ga2O3
(9)
HVPE
(6)
dislocation
(5)
ELO
(4)
epitaxy
(1)
etching
(1)
power device
(1)
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