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Alternative title: (0001)サファイア基板上におけるツインフリーα-Ga2O3のHVPE成長

Description:

The halide vapor phase epitaxy of a-Ga2O3 is demonstrated for the first time. The films are twin-free, heteroepitaxially grown on sapphire (0001) substrates using gallium chloride and oxygen as precursors. The growth rate reaches approximately 150 um/h, which is over two orders of magnitude larger than those of conventional vapor phase epitaxial growth techniques. X-ray omega-2theta and pole figure measurements reveal that the film is single-crystalline (0001) a-Ga2O3 with no detectable formation of a-Ga2O3. The optical bandgap is determined from the transmittance spectrum to be 5.16 eV.

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• In Copyright
  This is an author-created, un-copyedited version of an article accepted for publication/published in Applied Physics Express. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at https://doi.org/10.7567/APEX.8.055501.

Keyword: α-Ga2O3, HVPE

Date published: 2015-05-01

Publisher: IOP Publishing

Journal:

• APPLIED PHYSICS EXPRESS (ISSN: 18820778) vol. 8 issue. 5 p. 55501-55501

Funding:

Manuscript type: Author's version (Accepted manuscript)

MDR DOI: https://doi.org/10.48505/nims.4336

First published URL: https://doi.org/10.7567/APEX.8.055501

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Updated at: 2024-01-22 09:34:09 +0900

Published on MDR: 2024-01-22 12:30:07 +0900