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代替タイトル: (0001)サファイア基板上におけるツインフリーα-Ga2O3のHVPE成長

説明:

The halide vapor phase epitaxy of a-Ga2O3 is demonstrated for the first time. The films are twin-free, heteroepitaxially grown on sapphire (0001) substrates using gallium chloride and oxygen as precursors. The growth rate reaches approximately 150 um/h, which is over two orders of magnitude larger than those of conventional vapor phase epitaxial growth techniques. X-ray omega-2theta and pole figure measurements reveal that the film is single-crystalline (0001) a-Ga2O3 with no detectable formation of a-Ga2O3. The optical bandgap is determined from the transmittance spectrum to be 5.16 eV.

権利情報:

• In Copyright
  

  This is an author-created, un-copyedited version of an article accepted for publication/published in Applied Physics Express. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or
  any version derived from it. The Version of Record is available online at https://doi.org/10.7567/APEX.8.055501.

キーワード: α-Ga2O3, HVPE

刊行年月日: 2015-05-01

出版者: IOP Publishing

掲載誌:

• APPLIED PHYSICS EXPRESS (ISSN: 18820778) vol. 8 issue. 5 p. 55501-55501

研究助成金:

原稿種別: 著者最終稿 (Accepted manuscript)

MDR DOI: https://doi.org/10.48505/nims.4336

公開URL: https://doi.org/10.7567/APEX.8.055501

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更新時刻: 2024-01-22 09:34:09 +0900

MDRでの公開時刻: 2024-01-22 12:30:07 +0900