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代替タイトル: 二重ELOによるα-Ga2O3の貫通転位低減

説明:

We demonstrated the double layered epitaxial lateral overgrowth (ELO) of α-Ga2O3 by halide vapor phase epitaxy. Patterned masks were prepared on an ELO α-Ga2O3, and α-Ga2O3 islands were regrown on the mask windows. The α-Ga2O3 islands of second ELO grew selectively and coalesced step-by-step due to the nested-structure mask pattern. No dislocation was found by TEM not only above the masks but also above the windows of second ELO pattern, and the dislocation density was estimated to be less than 5 × 10^6 cm-2. We obtained continuous α-Ga2O3 films with a low density of dislocations in the entire surface.

権利情報:

• In Copyright
  

  © 2020 The Japan Society of Applied Physics
  
  This is an author-created, un-copyedited version of an article accepted for publication/published
  in Applied Physics Express. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or
  any version derived from it. The Version of Record is available online at https://doi.org/10.35848/1882-0786/ab9fc5.

キーワード: α-Ga2O3, dislocation, ELO

刊行年月日: 2020-07-01

出版者: IOP Publishing

掲載誌:

• Applied Physics Express (ISSN: 18820778) vol. 13 issue. 7 p. 75507-75507

研究助成金:

原稿種別: 著者最終稿 (Accepted manuscript)

MDR DOI: https://doi.org/10.48505/nims.4357

公開URL: https://doi.org/10.35848/1882-0786/ab9fc5

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更新時刻: 2024-01-22 09:40:04 +0900

MDRでの公開時刻: 2024-01-22 12:30:16 +0900