論文 Progress and challenges in the development of ultra-wide bandgap semiconductor α-Ga2O3 toward realizing power device applications

Yuichi Oshima SAMURAI ORCID (National Institute for Materials Science) ; Elaheh Ahmadi

Progress and challenges in the development of ultra-wide.pdf
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Yuichi Oshima, Elaheh Ahmadi. Progress and challenges in the development of ultra-wide bandgap semiconductor α-Ga2O3 toward realizing power device applications. APPLIED PHYSICS LETTERS. 2022, 121 (26), 260501-260501. https://doi.org/10.1063/5.0126698
SAMURAI

説明:

(abstract)

パワー、およびUV応用を指向したα型酸化ガリウムの関連技術の現状と技術課題を俯瞰し、今後の展望を述べる。

権利情報:

  • In Copyright
    This content may be downloaded for personal use only. Any other use requires prior permission of the author and the publisher. This material originally appeared in Yuichi Oshima et al., Appl. Phys. Lett. 121, 260501 (2022) and may be found at https://doi.org/10.1063/5.0126698.

キーワード: α-Ga2O3, epitaxy, power device

刊行年月日: 2022-12-26

出版者: AIP Publishing

掲載誌:

  • APPLIED PHYSICS LETTERS (ISSN: 00036951) vol. 121 issue. 26 p. 260501-260501

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原稿種別: 出版者版 (Version of record)

MDR DOI:

公開URL: https://doi.org/10.1063/5.0126698

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更新時刻: 2024-01-29 15:45:56 +0900

MDRでの公開時刻: 2024-01-30 08:30:10 +0900

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