Article Progress and challenges in the development of ultra-wide bandgap semiconductor α-Ga2O3 toward realizing power device applications

Yuichi Oshima SAMURAI ORCID (National Institute for Materials Science) ; Elaheh Ahmadi

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Yuichi Oshima, Elaheh Ahmadi. Progress and challenges in the development of ultra-wide bandgap semiconductor α-Ga2O3 toward realizing power device applications. APPLIED PHYSICS LETTERS. 2022, 121 (26), 260501-260501. https://doi.org/10.1063/5.0126698
SAMURAI

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(abstract)

パワー、およびUV応用を指向したα型酸化ガリウムの関連技術の現状と技術課題を俯瞰し、今後の展望を述べる。

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    This content may be downloaded for personal use only. Any other use requires prior permission of the author and the publisher. This material originally appeared in Yuichi Oshima et al., Appl. Phys. Lett. 121, 260501 (2022) and may be found at https://doi.org/10.1063/5.0126698.

Keyword: α-Ga2O3, epitaxy, power device

Date published: 2022-12-26

Publisher: AIP Publishing

Journal:

  • APPLIED PHYSICS LETTERS (ISSN: 00036951) vol. 121 issue. 26 p. 260501-260501

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Manuscript type: Publisher's version (Version of record)

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First published URL: https://doi.org/10.1063/5.0126698

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Updated at: 2024-01-29 15:45:56 +0900

Published on MDR: 2024-01-30 08:30:10 +0900

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