論文・データセット - MDR: NIMS Materials Data Repository

キーワード: Ga2O3

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28 件のレコードが見つかりました。

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paper_-112.pdf

HCl-based halide vapor phase epitaxy and selective-area HCl gas etching of (−112) β-Ga ₂ O ₃

ジャーナル論文
著者: Takayoshi Oshima (author) (この著者で検索)

https://orcid.org/0000-0001-8550-9735

NIMS Researchers Directory SAMURAI

;

Yuichi Oshima (author) (この著者で検索)

https://orcid.org/0000-0001-8293-4891

NIMS Researchers Directory SAMURAI
キーワード: Ga2O3, (−112), HVPE, HCl gas etching
刊行年月日: 2026-12-31
更新時刻: 2026-07-16 10:12:49 +0900

manuscript2022-11.pdf

High-performance β-Ga2O3 Schottky barrier diodes and metal-semiconductor field-effect transistors on a high doping level epitaxial layer

ジャーナル論文
著者: Qihao Zhang (author) (この著者で検索)

;

Jiangwei Liu (author) (この著者で検索)

https://orcid.org/0000-0003-2580-7401

National Institute for Materials Science

NIMS Researchers Directory SAMURAI

;

Chunming Tu (author) (この著者で検索)

;

Dongyuan Zhai (author) (この著者で検索)

;

Min He (author) (この著者で検索)

;

Jiwu Lu (author) (この著者で検索)
キーワード: Ga2O3, Transistor
刊行年月日: 2023-01-03
更新時刻: 2025-01-04 16:30:50 +0900

055207_1_5.0260753-2-8.pdf

Fabrication of air bridges on (100) β-Ga2O3 using crystallographic HCl gas etching

ジャーナル論文
著者: Takayoshi Oshima (author) (この著者で検索)

https://orcid.org/0000-0001-8550-9735

NIMS Researchers Directory SAMURAI

;

Yuichi Oshima (author) (この著者で検索)

https://orcid.org/0000-0001-8293-4891

NIMS Researchers Directory SAMURAI
キーワード: Ga2O3, HCl gas etching, air bridge
刊行年月日: 2025-05-01
更新時刻: 2025-05-07 12:30:22 +0900

042110_1_5.0186319.pdf

Using selective-area growth and selective-area etching on (−102) β-Ga2O3 substrates to fabricate plasma-damage-free vertical fins and trenches

ジャーナル論文
著者: Takayoshi Oshima (author) (この著者で検索)

https://orcid.org/0000-0001-8550-9735

National Institute for Materials Science Research Center for Electronic and Optical Materials

NIMS Researchers Directory SAMURAI

;

Yuichi Oshima (author) (この著者で検索)

https://orcid.org/0000-0001-8293-4891

National Institute for Materials Science Research Center for Electronic and Optical Materials

NIMS Researchers Directory SAMURAI
キーワード: Ga2O3, (-102), selective area growth, selective area etching
刊行年月日: 2024-01-22
更新時刻: 2025-01-25 12:30:12 +0900

jjap_64_8_088001.pdf

Step-and-terrace surface formation on (001) β-Ga₂O₃ by wet etching using 2.38 wt% tetramethylammonium hydroxide (TMAH) lithographic developer

ジャーナル論文
著者: Takayoshi Oshima (author) (この著者で検索)

https://orcid.org/0000-0001-8550-9735

NIMS Researchers Directory SAMURAI
キーワード: Ga2O3, TMAH, Wet etching
刊行年月日: 2025-08-01
更新時刻: 2025-08-18 16:30:36 +0900

paper.pdf

Wet etching of (−102) β-Ga ₂ O ₃ with tetramethylammonium hydroxide (TMAH)

ジャーナル論文
著者: Takayoshi Oshima (author) (この著者で検索)

https://orcid.org/0000-0001-8550-9735

NIMS Researchers Directory SAMURAI
キーワード: Ga2O3, wet etching, TMAH
刊行年月日: 2026-12-31
更新時刻: 2026-06-11 15:11:01 +0900

Oshima_2025_Appl._Phys._Express_18_116501-1.pdf

Fabrication of β -Ga ₂ O ₃ /air-gap structures on (010) β -Ga ₂ O ₃ by wet etching in tetramethylammonium hydroxide (TMAH)

ジャーナル論文
著者: Takayoshi Oshima (author) (この著者で検索)

https://orcid.org/0000-0001-8550-9735

NIMS Researchers Directory SAMURAI
キーワード: Ga2O3, TMAH, wet etching, MEMS
刊行年月日: 2025-11-01
更新時刻: 2025-11-27 08:30:13 +0900

Plasma-free anisotropic selective-area etching of -Ga2O3 using forming gas under atmospheric pressure_organized.pdf

Plasma-free anisotropic selective-area etching of β-Ga ₂ O ₃ using forming gas under atmospheric pressure

ジャーナル論文
著者: Takayoshi Oshima (author) (この著者で検索)

https://orcid.org/0000-0001-8550-9735

NIMS Researchers Directory SAMURAI

;

Rie Togashi (author) (この著者で検索)

https://orcid.org/0000-0002-9467-0755 (unauthenticated)

;

Yuichi Oshima (author) (この著者で検索)

https://orcid.org/0000-0001-8293-4891

NIMS Researchers Directory SAMURAI
キーワード: Ga2O3, forming gas, anisotropic etching, plasma-free process
刊行年月日: 2024-12-31
更新時刻: 2024-07-31 12:30:20 +0900

260206_ASGO_Letter_manuscript_v6.pdf

Lattice-matched (Al x Sc y Ga1− x − y )2O3/ β -Ga2O3 heterostructures with widely tunable bandgap

ジャーナル論文
著者: Kazuki Koreishi (author) (この著者で検索)

https://orcid.org/0009-0000-1580-8262 (unauthenticated)

;

Kodai Niitsu (author) (この著者で検索)

https://orcid.org/0000-0002-0430-8868

NIMS Researchers Directory SAMURAI

;

Takuto Soma (author) (この著者で検索)

https://orcid.org/0000-0001-8685-9606 (unauthenticated)

;

Kohei Yoshimatsu (author) (この著者で検索)

https://orcid.org/0000-0001-9288-068X (unauthenticated)

;

Akira Ohtomo (author) (この著者で検索)

https://orcid.org/0000-0003-0300-4712 (unauthenticated)
キーワード: Ga2O3, Wide bandgap, Bandgap engineering
刊行年月日: 2026-07-06
更新時刻: 2026-08-06 09:39:59 +0900

Manuscript_final .docx

Selective area growth of β-Ga2O3 by HCl-based halide vapor phase epitaxy

ジャーナル論文
著者: Takayoshi Oshima (author) (この著者で検索)

https://orcid.org/0000-0001-8550-9735

National Institute for Materials Science

NIMS Researchers Directory SAMURAI

;

Yuichi Oshima (author) (この著者で検索)

https://orcid.org/0000-0001-8293-4891

National Institute for Materials Science

NIMS Researchers Directory SAMURAI
キーワード: Ga2O3, selective area growth
刊行年月日: 2022-07-01
更新時刻: 2024-01-05 22:13:27 +0900