Vacancy-type defects introduced by mechanical polishing in ammonothermal GaN studied by a monoenergetic positron beam
- ジャーナル論文
- 著者
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Akira Uedono (author) (この著者で検索)
https://orcid.org/0000-0001-6224-4869
(unauthenticated)
;
Shoji Ishibashi (author) (この著者で検索)
https://orcid.org/0000-0002-4896-3530
(unauthenticated)
;
Kohei Shima (author) (この著者で検索)
https://orcid.org/0000-0003-0967-141X
(unauthenticated)
;
;Shigefusa F. Chichibu (author) (この著者で検索)Kacper Sierakowski (author) (この著者で検索)
https://orcid.org/0000-0002-9447-1182
(unauthenticated)
;
Makoto Oishi (author) (この著者で検索)
https://orcid.org/0000-0003-3402-4556
(unauthenticated)
;
Noriyuki Okada (author) (この著者で検索)
https://orcid.org/0009-0002-0090-5646
(unauthenticated)
;
Takuro Nagai (author) (この著者で検索)
;
Michal Bockowski (author) (この著者で検索)
https://orcid.org/0000-0003-1616-685X
(unauthenticated)
- キーワード
- Mechanical polishing, GaN, Vacancy, Defect, Positron annihilation
- 刊行年月日
- 2026-04-12
- 更新時刻
- 2026-04-20 08:56:29 +0900
Decomposition Behavior of GaN Under Solid and Ambient N2 Pressure
- ジャーナル論文
- 著者
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Fumio Kawamura (author) (この著者で検索)National Institute for Materials Science
;
;Hidenobu Murata (author) (この著者で検索)JFCCNaoomi Yamada (author) (この著者で検索)Chubu university
- キーワード
- GaN, Decomposition, High pressure, Nitrogen atmosphere
- 刊行年月日
- 2024-08-12
- 更新時刻
- 2026-02-14 20:25:25 +0900
Formation of GaN mesas with reverse-tapered edge structures on a lattice-matched AlInN layer for a positive beveled edge termination
- ジャーナル論文
- 著者
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Takayoshi Oshima (author) (この著者で検索)National Institute for Materials Science Research Center for Electronic and Optical Materials/Functional Materials Field/Ultra-wide Bandgap Semiconductors Group
;
Masataka Imura (author) (この著者で検索)National Institute for Materials Science Research Center for Electronic and Optical Materials/Functional Materials Field/Next-generation Semiconductor Group
;
Yuichi Oshima (author) (この著者で検索)National Institute for Materials Science Research Center for Electronic and Optical Materials/Functional Materials Field/Ultra-wide Bandgap Semiconductors Group
- キーワード
- GaN, AlInN, etching, positive bevel edge termination
- 刊行年月日
- 2024-08-01
- 更新時刻
- 2024-08-02 12:30:52 +0900
Machine learning assisted nanobeam X-ray diffraction based analysis on hydride vapor-phase epitaxy GaN
- ジャーナル論文
- 著者
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;Zhendong Wu (author) (この著者で検索)Yusuke Hayashi (author) (この著者で検索)National Institute for Materials Science
;
;Tetsuya Tohei (author) (この著者で検索);Kazushi Sumitani (author) (この著者で検索);Yasuhiko Imai (author) (この著者で検索);Shigeru Kimura (author) (この著者で検索)Akira Sakai (author) (この著者で検索)
- キーワード
- GaN, SPring-8, nanoXRD, Machine learning
- 刊行年月日
- 2025-08-01
- 更新時刻
- 2025-07-31 12:30:18 +0900
[Research Highlights Vol.68] New GaN MEMS Resonator Is Temperature-Stable up to 600 K
- 雑誌
- コレクション
- Research Highlights
- 著者
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International Center for Materials Nanoarchitectonics (WPI-MANA) (author) (この著者で検索)National Institute for Materials Science
- キーワード
- GaN, MEMS, NEMS, energy storage, temperature coefficient of frequency, AlN, Si, Strain
- 刊行年月日
- 2021-07-13
- 更新時刻
- 2023-12-26 21:38:08 +0900
Analysis of In x Ga1− x N growth rate in atmospheric-pressure metal-organic vapor phase epitaxy: Insights into incorporation and desorption processes of GaN and InN for precise growth control
- ジャーナル論文
- 著者
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Masataka Imura (author) (この著者で検索)National Institute for Materials Science
;
Takanobu Hiroto (author) (この著者で検索)National Institute for Materials Science
;
Takaaki Mano (author) (この著者で検索)National Institute for Materials Science
;
;Yuri Itokazu (author) (この著者で検索)Masafumi Jo (author) (この著者で検索)
- キーワード
- MOVPE, GaN, InN, InGaN, XRD, Superlattice
- 刊行年月日
- 2026-03-21
- 更新時刻
- 2026-04-03 09:31:08 +0900
Heat transport exploration through the GaN/diamond interfaces using machine learning potential
- ジャーナル論文
- 著者
-
;Zhanpeng Sun (author) (この著者で検索);Yunfei Song (author) (この著者で検索);Zijun Qi (author) (この著者で検索);Xiang Sun (author) (この著者で検索)Meiyong Liao (author) (この著者で検索)National Institute for Materials Science
;
;Rui Li (author) (この著者で検索)Qijun Wang (author) (この著者で検索)
https://orcid.org/0000-0002-4299-3798
(unauthenticated)
;
;Lijie Li (author) (この著者で検索)Gai Wu (author) (この著者で検索)
https://orcid.org/0000-0002-9726-6328
(unauthenticated)
;
;Wei Shen (author) (この著者で検索)Sheng Liu (author) (この著者で検索)
- キーワード
- thermal conductivity, GaN, Diamond
- 刊行年月日
- 2025-01-16
- 更新時刻
- 2025-04-22 12:30:10 +0900
Communication—A Powerful Method to Improve Dielectric/GaN Interface Properties: A Dummy SiO2 Process
- ジャーナル論文
- 著者
-
Yoshihiro Irokawa (author) (この著者で検索)National Institute for Materials Science
;
Toshihide Nabatame (author) (この著者で検索)National Institute for Materials Science
;
;Tomomi Sawada (author) (この著者で検索)National Institute for Materials Science;Manami Miyamoto (author) (この著者で検索);Hiromi Miura (author) (この著者で検索)Kazuhito Tsukagoshi (author) (この著者で検索)National Institute for Materials Science
;
Yasuo Koide (author) (この著者で検索)National Institute for Materials Science
- キーワード
- GaN
- 刊行年月日
- 2024-08-01
- 更新時刻
- 2024-09-02 12:30:27 +0900
A three-step surface treatment and its impacts on electrical properties of c- and m-face GaN/Al2O3 MOS structures
- ジャーナル論文
- 著者
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Masahiro Hara (author) (この著者で検索)
https://orcid.org/0000-0001-9748-8011
(unauthenticated)
;
Toshihide Nabatame (author) (この著者で検索)
;
Yoshihiro Irokawa (author) (この著者で検索)
;
;Tomomi Sawada (author) (この著者で検索);Manami Miyamoto (author) (この著者で検索);Hiromi Miura (author) (この著者で検索);Tsunenobu Kimoto (author) (この著者で検索)Yasuo Koide (author) (この著者で検索)
- キーワード
- GaN
- 刊行年月日
- 2025-05-07
- 更新時刻
- 2025-05-08 12:30:16 +0900
Continuous real-time O 1s core XPS spectra of initial O2 molecule adsorption on polar and m-plane surfaces of GaN
- データセット
- 著者
-
SUMIYA, Masatomo (author) (この著者で検索)National Institute for Materials Science
- キーワード
- GaN, Gallium nitride, Oxidation, Adsorption, XPS, SPring-8
- 刊行年月日
- 2020-11-19
- 更新時刻
- 2024-01-05 22:13:22 +0900