Download file (167KB)
Download as zip (163KB)

コレクション

Research Highlights

引用

説明:

A team at MANA has demonstrated a highly temperature-stable GaN resonator that boasts high-frequency stability, high Q factor and the potential for large-scale integration with silicon technology.

権利情報:

• In Copyright
  In Copyright

キーワード: GaN, MEMS, NEMS, energy storage, temperature coefficient of frequency, AlN, Si, Strain

刊行年月日: 2021-07-13

出版者: National Institute for Materials Science

掲載誌:

• MANA E-BULLETIN vol. 68

研究助成金:

原稿種別: 出版者版 (Version of record)

MDR DOI: https://doi.org/10.48505/nims.3808

公開URL: https://www.nims.go.jp/mana/research/highlights/vol68.html

関連資料:

• refers
• (dataset)
• https://doi.org/10.1109/IEDM13553.2020.9372065

その他の識別子:

連絡先:

更新時刻: 2023-12-26 21:38:08 +0900

MDRでの公開時刻: 2022-12-16 13:35:01 +0900