Magazine [Research Highlights Vol.68] New GaN MEMS Resonator Is Temperature-Stable up to 600 K

International Center for Materials Nanoarchitectonics (WPI-MANA) (National Institute for Materials ScienceROR)

[Vol. 68]New GaN MEMS Resonator Is Temperature-Stable up to 600 K_ WPI-MANA.pdf
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Research Highlights

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International Center for Materials Nanoarchitectonics (WPI-MANA). [Research Highlights Vol.68] New GaN MEMS Resonator Is Temperature-Stable up to 600 K. https://doi.org/10.48505/nims.3808

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(abstract)

A team at MANA has demonstrated a highly temperature-stable GaN resonator that boasts high-frequency stability, high Q factor and the potential for large-scale integration with silicon technology.

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Keyword: GaN, MEMS, NEMS, energy storage, temperature coefficient of frequency, AlN, Si, Strain

Date published: 2021-07-13

Publisher: National Institute for Materials Science

Journal:

  • MANA E-BULLETIN vol. 68

Funding:

Manuscript type: Publisher's version (Version of record)

MDR DOI: https://doi.org/10.48505/nims.3808

First published URL: https://www.nims.go.jp/mana/research/highlights/vol68.html

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Updated at: 2023-12-26 21:38:08 +0900

Published on MDR: 2022-12-16 13:35:01 +0900

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