説明:
(abstract)The decomposition curve of GaN under solid pressure showed a considerably moderate increase compared to that under a N2 pressure. Such difference was attributed to the N2 dissolution in the Ga melt, where a high N2 pressure creates a supersaturated GaN state, which effectively prevent its decomposition. Conversely, under a solid pressure, the increase in the GaN decomposition temperature followed a common change in enthalpy, which is consistent with its typical thermodynamic behavior. The decomposition behavior of GaN under a solid pressure demonstrated its successful high-temperature annealing using a belt-type high-pressure apparatus. Therefore, this study provides valuable insights into the thermodynamic stability of GaN under different pressures, which is critical for optimizing high-performance GaN-based devices.
権利情報:
キーワード: GaN, Decomposition, High pressure, Nitrogen atmosphere
刊行年月日: 2024-08-12
出版者: Elsevier
掲載誌:
研究助成金:
原稿種別: 著者最終稿 (Accepted manuscript)
MDR DOI: https://doi.org/10.48505/nims.4693
公開URL: https://doi.org/10.1016/j.matlet.2024.137185
関連資料:
その他の識別子:
連絡先: FUMIO KAWAMURA (National Institute for Materials Science) KAWAMURA.Fumio@nims.go.jp
更新時刻: 2026-02-14 20:25:25 +0900
MDRでの公開時刻: 2026-08-12 08:30:04 +0900
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GaN_高圧下の分解温度_(MDR登録用).pdf
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