Description:
(abstract)The decomposition curve of GaN under solid pressure showed a considerably moderate increase compared to that under a N2 pressure. Such difference was attributed to the N2 dissolution in the Ga melt, where a high N2 pressure creates a supersaturated GaN state, which effectively prevent its decomposition. Conversely, under a solid pressure, the increase in the GaN decomposition temperature followed a common change in enthalpy, which is consistent with its typical thermodynamic behavior. The decomposition behavior of GaN under a solid pressure demonstrated its successful high-temperature annealing using a belt-type high-pressure apparatus. Therefore, this study provides valuable insights into the thermodynamic stability of GaN under different pressures, which is critical for optimizing high-performance GaN-based devices.
Rights:
Keyword: GaN, Decomposition, High pressure, Nitrogen atmosphere
Date published: 2024-08-12
Publisher: Elsevier
Journal:
Funding:
Manuscript type: Author's version (Accepted manuscript)
MDR DOI: https://doi.org/10.48505/nims.4693
First published URL: https://doi.org/10.1016/j.matlet.2024.137185
Related item:
Other identifier(s):
Contact agent: FUMIO KAWAMURA (National Institute for Materials Science) KAWAMURA.Fumio@nims.go.jp
Updated at: 2026-02-14 20:25:25 +0900
Published on MDR: 2026-08-12 08:30:04 +0900
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GaN_高圧下の分解温度_(MDR登録用).pdf
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