Plasma-free anisotropic selective-area etching of β-Ga 2 O 3 using forming gas under atmospheric pressure
- ジャーナル論文
- 著者
-
Takayoshi Oshima (author) (この著者で検索)
;
Rie Togashi (author) (この著者で検索)
https://orcid.org/0000-0002-9467-0755
(unauthenticated)
;
Yuichi Oshima (author) (この著者で検索)
- キーワード
- Ga2O3, forming gas, anisotropic etching, plasma-free process
- 刊行年月日
- 2024-12-31
- 更新時刻
- 2024-07-31 12:30:20 +0900
Characteristics of β-Ga2O3/Al2O3/Pt capacitors with a Ga2O3 surface modified using the dummy-SiO2 process
- ジャーナル論文
- 著者
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Toshihide Nabatame (author) (この著者で検索)National Institute for Materials Science Research Center for Materials Nanoarchitectonics (MANA)
;
Yoshihiro Irokawa (author) (この著者で検索)National Institute for Materials Science Research Center for Electronic and Optical Materials/Functional Materials Field/Ultra-wide Bandgap Semiconductors Group
;
;Tomomi Sawada (author) (この著者で検索)National Institute for Materials Science Research Center for Materials Nanoarchitectonics (MANA)/Semiconductor Materials Field/Thin Film Electronics Group;Hiromi Miura (author) (この著者で検索)National Institute for Materials Science Research Center for Materials Nanoarchitectonics (MANA)/Semiconductor Materials Field/Thin Film Electronics Group;Manami Miyamoto (author) (この著者で検索)National Institute for Materials Science Research Center for Materials Nanoarchitectonics (MANA)/Semiconductor Materials Field/Thin Film Electronics GroupTakashi Onaya (author) (この著者で検索)
https://orcid.org/0000-0002-2710-8623
(unauthenticated)
National Institute for Materials Science Research Center for Materials Nanoarchitectonics (MANA)/Semiconductor Materials Field/Thin Film Electronics Group
;
Yasuo Koide (author) (この著者で検索)National Institute for Materials Science Research Center for Electronic and Optical Materials/Functional Materials Field/Next-generation Semiconductor Group
;
Kazuhito Tsukagoshi (author) (この著者で検索)National Institute for Materials Science Research Center for Materials Nanoarchitectonics (MANA)/Semiconductor Materials Field/Thin Film Electronics Group
- キーワード
- Ga2O3, atomic layer deposition, dummy-SiO2, Al2O3, positive bias stress
- 刊行年月日
- 2026-06-01
- 更新時刻
- 2026-08-18 11:30:17 +0900
Halide vapor phase epitaxy of a thick c -plane α-Ga2O3 film on a high-quality α-Cr2O3/sapphire template
- ジャーナル論文
- 著者
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Yuichi Oshima (author) (この著者で検索)
;
Takayoshi Oshima (author) (この著者で検索)
;
Shiyu Xiao (author) (この著者で検索)
https://orcid.org/0009-0007-0382-0396
(unauthenticated)
;
;Kazuto Murakami (author) (この著者で検索);Katsuhiro Imai (author) (この著者で検索)Takahiro Tomita (author) (この著者で検索)
- キーワード
- Ga2O3, HVPE, Cr2O3
- 刊行年月日
- 2026-02-21
- 更新時刻
- 2026-02-18 16:30:15 +0900
Lattice-matched (Al x Sc y Ga1− x − y )2O3/ β -Ga2O3 heterostructures with widely tunable bandgap
- ジャーナル論文
- 著者
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Kazuki Koreishi (author) (この著者で検索)
https://orcid.org/0009-0000-1580-8262
(unauthenticated)
;
Kodai Niitsu (author) (この著者で検索)
;
Takuto Soma (author) (この著者で検索)
https://orcid.org/0000-0001-8685-9606
(unauthenticated)
;
Kohei Yoshimatsu (author) (この著者で検索)
https://orcid.org/0000-0001-9288-068X
(unauthenticated)
;
Akira Ohtomo (author) (この著者で検索)
https://orcid.org/0000-0003-0300-4712
(unauthenticated)
- キーワード
- Ga2O3, Wide bandgap, Bandgap engineering
- 刊行年月日
- 2026-07-06
- 更新時刻
- 2026-08-06 09:39:59 +0900
Step-and-terrace surface formation on (001) β-Ga2O3 by wet etching using 2.38 wt% tetramethylammonium hydroxide (TMAH) lithographic developer
- ジャーナル論文
- 著者
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Takayoshi Oshima (author) (この著者で検索)
- キーワード
- Ga2O3, TMAH, Wet etching
- 刊行年月日
- 2025-08-01
- 更新時刻
- 2025-08-18 16:30:36 +0900
Epitaxial lateral overgrowth of m -plane α-Ga 2 O 3 by halide vapor phase epitaxy
- ジャーナル論文
- 著者
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Yuichi Oshima (author) (この著者で検索)
;
Takashi Shinohe (author) (この著者で検索)
https://orcid.org/0009-0000-5559-1432
(unauthenticated)
- キーワード
- Ga2O3, dislocation, ELO, HVPE
- 刊行年月日
- 2025-12-31
- 更新時刻
- 2025-04-23 12:30:12 +0900