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説明:

Step-and-terrace formation on a (−112) β-Ga2O3 substrate subjected to chemical mechanical polishing was investigated by thermal annealing and subsequent wet-chemical treatments. Atomic force microscopy revealed that annealing at approximately 1000 °C produced a well-defined stepped morphology with predominantly monolayer steps about 0.2 nm high, consistent with the 0.210 nm spacing between adjacent (−112) planes. In contrast, treatments with hydrofluoric acid, a sulfuric acid–hydrogen peroxide mixture, and tetramethylammonium hydroxide degraded the thermally formed stepped morphology. These results demonstrate that thermal annealing is effective for preparing ordered (−112) β-Ga2O3 surfaces and provide guidance for future pre- and post-treatment processes.

権利情報:

• Creative Commons BY Attribution 4.0 International
  

キーワード: Ga2O3

刊行年月日: 2026-09-15

出版者: IOP Publishing

掲載誌:

• Japanese Journal of Applied Physics (ISSN: 00214922) vol. 65 issue. 17 178001

研究助成金:

• New Energy and Industrial Technology Development Organization JPNP22007
• Japan Society for the Promotion of Science JP24K01368

原稿種別: 出版者版 (Version of record)

MDR DOI:

公開URL: https://doi.org/10.35848/1347-4065/aea1b2

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更新時刻: 2026-09-14 09:13:42 +0900

MDRでの公開時刻: 2026-09-14 10:23:52 +0900