キーワード: GaN
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12 件のレコードが見つかりました。 1件目から10件目まで表示します。

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APL24-AR-02539Authors.pdf
Magnetoresistance analysis of two-dimensional hole gases in GaN/AlGaN/GaN double heterostructures
ジャーナル論文
著者
S. Yamada (author) (この著者で検索)
ORCID ;
A. Fujimoto (author) (この著者で検索)
;
S. Yagi (author) (この著者で検索)
ORCID ;
H. Narui (author) (この著者で検索)
ORCID ;
E. Yamaguchi (author) (この著者で検索)
; ORCID SAMURAI
キーワード
GaN, Double Heterostructures, Hole gas, Magnetoresistance, Spin-Orbit coupling
刊行年月日
2024-06-24
更新時刻
2024-07-13 08:30:10 +0900
Final manuscript.pdf
Vacancy-type defects introduced by mechanical polishing in ammonothermal GaN studied by a monoenergetic positron beam
ジャーナル論文
著者
Akira Uedono (author) (この著者で検索)
ORCID ;
Shoji Ishibashi (author) (この著者で検索)
ORCID ;
Kohei Shima (author) (この著者で検索)
ORCID ;
Shigefusa F. Chichibu (author) (この著者で検索)
;
Kacper Sierakowski (author) (この著者で検索)
ORCID ;
Makoto Oishi (author) (この著者で検索)
ORCID ;
Noriyuki Okada (author) (この著者で検索)
ORCID ; ORCID SAMURAI ;
Michal Bockowski (author) (この著者で検索)
ORCID
キーワード
Mechanical polishing, GaN, Vacancy, Defect, Positron annihilation
刊行年月日
2026-04-12
更新時刻
2026-04-20 08:56:29 +0900
Shimada_transistor_nanoXRD-JAP-250704rev2-marked.pdf
In situ nanobeam x-ray diffraction of local strain in AlGaN/GaN high-electron-mobility transistors under operating condition
ジャーナル論文
著者
Akihiro Shimada (author) (この著者で検索)
;
Haruna Shiomi (author) (この著者で検索)
;
Tetsuya Tohei (author) (この著者で検索)
ORCID ; ORCID SAMURAI ;
Masaya Yamaguchi (author) (この著者で検索)
;
Junpei Yamamoto (author) (この著者で検索)
ORCID ;
Takeaki Hamachi (author) (この著者で検索)
ORCID ;
Yasuhiko Imai (author) (この著者で検索)
ORCID ;
Kazushi Sumitani (author) (この著者で検索)
;
Shigeru Kimura (author) (この著者で検索)
ORCID ;
Shota Kaneki (author) (この著者で検索)
ORCID ;
Tamotsu Hashizume (author) (この著者で検索)
ORCID ;
Akira Sakai (author) (この著者で検索)
ORCID
キーワード
GaN, HEMT, Strain, In situ
刊行年月日
2025-08-21
更新時刻
2025-08-23 08:30:23 +0900
Wu Mater Design 2026 nanoXRD ML.pdf
Uncovering crystal structure evolution via nanobeam X-ray diffraction with a continuity-driven machine learning approach
ジャーナル論文
著者
Zhendong Wu (author) (この著者で検索)
ORCID ;
Tetsuya Tohei (author) (この著者で検索)
ORCID ; ORCID SAMURAI ;
Shigeyoshi Usami (author) (この著者で検索)
;
Masayuki Imanishi (author) (この著者で検索)
;
Yusuke Mori (author) (この著者で検索)
;
Junichi Takino (author) (この著者で検索)
;
Kazushi Sumitani (author) (この著者で検索)
;
Yasuhiko Imai (author) (この著者で検索)
ORCID ;
Shigeru Kimura (author) (この著者で検索)
ORCID ;
Akira Sakai (author) (この著者で検索)
ORCID
キーワード
GaN, nanoXRD, ML
刊行年月日
2026-02-15
更新時刻
2026-02-26 12:30:06 +0900
paper.pdf
Formation of GaN mesas with reverse-tapered edge structures on a lattice-matched AlInN layer for a positive beveled edge termination
ジャーナル論文
著者
Takayoshi Oshima (author) (この著者で検索)
National Institute for Materials Science Research Center for Electronic and Optical Materials/Functional Materials Field/Ultra-wide Bandgap Semiconductors Group
ORCID SAMURAI ;
Masataka Imura (author) (この著者で検索)
National Institute for Materials Science Research Center for Electronic and Optical Materials/Functional Materials Field/Next-generation Semiconductor Group
ORCID SAMURAI ;
Yuichi Oshima (author) (この著者で検索)
National Institute for Materials Science Research Center for Electronic and Optical Materials/Functional Materials Field/Ultra-wide Bandgap Semiconductors Group
ORCID SAMURAI
キーワード
GaN, AlInN, etching, positive bevel edge termination
刊行年月日
2024-08-01
更新時刻
2024-08-02 12:30:52 +0900
InGaN_JAP_manuscript_251203_09_04_mark.docx
Analysis of In x Ga1− x N growth rate in atmospheric-pressure metal-organic vapor phase epitaxy: Insights into incorporation and desorption processes of GaN and InN for precise growth control
ジャーナル論文
著者
Masataka Imura (author) (この著者で検索)
National Institute for Materials Science
ORCID SAMURAI ;
Takanobu Hiroto (author) (この著者で検索)
National Institute for Materials Science
ORCID SAMURAI ;
Takaaki Mano (author) (この著者で検索)
National Institute for Materials Science
ORCID SAMURAI ;
Yuri Itokazu (author) (この著者で検索)
;
Masafumi Jo (author) (この著者で検索)
キーワード
MOVPE, GaN, InN, InGaN, XRD, Superlattice
刊行年月日
2026-03-21
更新時刻
2026-04-03 09:31:08 +0900
031101_1_5.0178995.pdf
Local defect and mid-gap state analysis of GaN using monochromated EELS combined with nanodiffraction and atomic-resolution imaging
ジャーナル論文
著者
Shunsuke Yamashita (author) (この著者で検索)
ORCID ;
Sei Fukushima (author) (この著者で検索)
;
Jun Kikkawa (author) (この著者で検索)
National Institute for Materials Science (NIMS) Center for Basic Research on Materials
ORCID SAMURAI ;
Ryoji Arai (author) (この著者で検索)
;
Yuya Kanitani (author) (この著者で検索)
ORCID ;
Koji Kimoto (author) (この著者で検索)
National Institute for Materials Science (NIMS) Center for Basic Research on Materials
ORCID SAMURAI ;
Yoshihiro Kudo (author) (この著者で検索)
キーワード
defect, GaN, EELS, 4D-STEM, HAADF-STEM, ABF-STEM, HAXPES
刊行年月日
2024-03-01
更新時刻
2024-03-19 16:56:29 +0900
Wu 2025 J Appl Crystallogr nanoXRD UMAP HVPE GaN.pdf
Machine learning assisted nanobeam X-ray diffraction based analysis on hydride vapor-phase epitaxy GaN
ジャーナル論文
著者
Zhendong Wu (author) (この著者で検索)
;
Yusuke Hayashi (author) (この著者で検索)
National Institute for Materials Science
ORCID SAMURAI ;
Tetsuya Tohei (author) (この著者で検索)
;
Kazushi Sumitani (author) (この著者で検索)
;
Yasuhiko Imai (author) (この著者で検索)
;
Shigeru Kimura (author) (この著者で検索)
;
Akira Sakai (author) (この著者で検索)
キーワード
GaN, SPring-8, nanoXRD, Machine learning
刊行年月日
2025-08-01
更新時刻
2025-07-31 12:30:18 +0900
Exploring the Effect of Temperature and Interface Atom Type on Heat Transport through the GaNdiamond Interfaces using Machine Learning Potential_Zhanpeng Sun-Prof. Liao.docx
Heat transport exploration through the GaN/diamond interfaces using machine learning potential
ジャーナル論文
著者
Zhanpeng Sun (author) (この著者で検索)
;
Yunfei Song (author) (この著者で検索)
;
Zijun Qi (author) (この著者で検索)
;
Xiang Sun (author) (この著者で検索)
;
Meiyong Liao (author) (この著者で検索)
National Institute for Materials Science
ORCID SAMURAI ;
Rui Li (author) (この著者で検索)
;
Qijun Wang (author) (この著者で検索)
ORCID ;
Lijie Li (author) (この著者で検索)
;
Gai Wu (author) (この著者で検索)
ORCID ;
Wei Shen (author) (この著者で検索)
;
Sheng Liu (author) (この著者で検索)
キーワード
thermal conductivity, GaN, Diamond
刊行年月日
2025-01-16
更新時刻
2025-04-22 12:30:10 +0900
Irokawa_2024_ECS_J._Solid_State_Sci._Technol._13_045002.pdf
Pt/GaN Schottky barrier height lowering by incorporated hydrogen
ジャーナル論文
著者
色川 芳宏 (author) (この著者で検索)
National Institute for Materials Science Research Center for Electronic and Optical Materials/Functional Materials Field/Next-generation Semiconductor Group
ORCID SAMURAI ;
大井 暁彦 (author) (この著者で検索)
National Institute for Materials Science Research Network and Facility Services Division/Materials Fabrication and Analysis Platform/Nanofabrication Unit
ORCID SAMURAI ;
生田目 俊秀 (author) (この著者で検索)
National Institute for Materials Science Research Center for Materials Nanoarchitectonics (MANA)/Quantum Materials Field/Thin Film Electronics Group
ORCID SAMURAI ;
小出 康夫 (author) (この著者で検索)
National Institute for Materials Science Research Center for Electronic and Optical Materials/Functional Materials Field/Next-generation Semiconductor Group
ORCID SAMURAI
キーワード
GaN, hydrogen, Schottky barrier height
刊行年月日
2024-04-01
更新時刻
2024-04-10 16:30:21 +0900
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