20 件のレコードが見つかりました。
High-performance β-Ga2O3 Schottky barrier diodes and metal-semiconductor field-effect transistors on a high doping level epitaxial layer
- ジャーナル論文
- 著者
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;Qihao Zhang (author) (この著者で検索)Jiangwei Liu (author) (この著者で検索)National Institute for Materials Science
;
;Chunming Tu (author) (この著者で検索);Dongyuan Zhai (author) (この著者で検索);Min He (author) (この著者で検索)Jiwu Lu (author) (この著者で検索) - キーワード
- Ga2O3, Transistor
- 刊行年月日
- 2023-01-03
- 更新時刻
- 2025-01-04 16:30:50 +0900
Photoelectron holographic study for atomic site occupancy for Si dopants in Si-doped κ-Ga2O3(001)
- ジャーナル論文
- 著者
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Yuhua Tsai (author) (この著者で検索)National Institute for Materials Science Research Center for Electronic and Optical Materials/Functional Materials Field/Nano Electronics Device Materials Group
;
;Yusuke Hashimoto (author) (この著者で検索)NAIST;ZeXu Sun (author) (この著者で検索)NAIST;Takuya Moriki (author) (この著者で検索)NAIST;Takashi Tadamura (author) (この著者で検索)NAISTTakahiro Nagata (author) (この著者で検索)National Institute for Materials Science Research Center for Electronic and Optical Materials/Functional Materials Field/Nano Electronics Device Materials Group
;
;Piero Mazzolini (author) (この著者で検索)University of Parma;Antonella Parisini (author) (この著者で検索)University of Parma;Matteo Bosi (author) (この著者で検索)IMEM-CNR;Luca Seravalli (author) (この著者で検索)IMEM-CNR;Tomohiro Matsushita (author) (この著者で検索)NAISTYoshiyuki Yamashita (author) (この著者で検索)National Institute for Materials Science Research Center for Electronic and Optical Materials/Functional Materials Field/Nano Electronics Device Materials Group
- キーワード
- Ga2O3, κ-Ga2O3
- 刊行年月日
- 2024-04-03
- 更新時刻
- 2025-03-07 12:30:11 +0900
Plasma-free anisotropic selective-area etching of β-Ga 2 O 3 using forming gas under atmospheric pressure
- ジャーナル論文
- 著者
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Takayoshi Oshima (author) (この著者で検索)
;
Rie Togashi (author) (この著者で検索)
https://orcid.org/0000-0002-9467-0755
(unauthenticated)
;
Yuichi Oshima (author) (この著者で検索)
- キーワード
- Ga2O3, forming gas, anisotropic etching, plasma-free process
- 刊行年月日
- 2024-12-31
- 更新時刻
- 2024-07-31 12:30:20 +0900
Using selective-area growth and selective-area etching on (−102) β-Ga2O3 substrates to fabricate plasma-damage-free vertical fins and trenches
- ジャーナル論文
- 著者
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Takayoshi Oshima (author) (この著者で検索)National Institute for Materials Science Research Center for Electronic and Optical Materials
;
Yuichi Oshima (author) (この著者で検索)National Institute for Materials Science Research Center for Electronic and Optical Materials
- キーワード
- Ga2O3, (-102), selective area growth, selective area etching
- 刊行年月日
- 2024-01-22
- 更新時刻
- 2025-01-25 12:30:12 +0900
Halide vapor phase epitaxy of a thick c -plane α-Ga2O3 film on a high-quality α-Cr2O3/sapphire template
- ジャーナル論文
- 著者
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Yuichi Oshima (author) (この著者で検索)
;
Takayoshi Oshima (author) (この著者で検索)
;
Shiyu Xiao (author) (この著者で検索)
https://orcid.org/0009-0007-0382-0396
(unauthenticated)
;
;Kazuto Murakami (author) (この著者で検索);Katsuhiro Imai (author) (この著者で検索)Takahiro Tomita (author) (この著者で検索)
- キーワード
- Ga2O3, HVPE, Cr2O3
- 刊行年月日
- 2026-02-21
- 更新時刻
- 2026-02-18 16:30:15 +0900
Fabrication of β -Ga 2 O 3 /air-gap structures on (010) β -Ga 2 O 3 by wet etching in tetramethylammonium hydroxide (TMAH)
- ジャーナル論文
- 著者
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Takayoshi Oshima (author) (この著者で検索)
- キーワード
- Ga2O3, TMAH, wet etching, MEMS
- 刊行年月日
- 2025-11-01
- 更新時刻
- 2025-11-27 08:30:13 +0900