Anisotropic non-plasma HCl gas etching of (010) β-Ga2O3 substrate
- ジャーナル論文
- 著者
-
Takayoshi Oshima (author) (この著者で検索)National Institute for Materials Science
;
Yuichi Oshima (author) (この著者で検索)National Institute for Materials Science
- キーワード
- Ga2O3, HCl gas etching
- 刊行年月日
- 2023-06-01
- 更新時刻
- 2024-06-15 08:30:13 +0900
Fabrication of air bridges on (100) β-Ga2O3 using crystallographic HCl gas etching
- ジャーナル論文
- 著者
-
Takayoshi Oshima (author) (この著者で検索)
;
Yuichi Oshima (author) (この著者で検索)
- キーワード
- Ga2O3, HCl gas etching, air bridge
- 刊行年月日
- 2025-05-01
- 更新時刻
- 2025-05-07 12:30:22 +0900
Epitaxial Lateral Overgrowth of c-plane α-Ga2O3 using a stripe mask with ultra-narrow windows
- ジャーナル論文
- 著者
-
Yuichi Oshima (author) (この著者で検索)National Institute for Materials Science Research Center for Electronic and Optical Materials/Functional Materials Field/Ultra-wide Bandgap Semiconductors Group
;
Takashi Shinohe (author) (この著者で検索)FLOSFIA INC.
- キーワード
- Ga2O3, dislocation, HVPE, ELO
- 刊行年月日
- 2025-05-19
- 更新時刻
- 2025-05-21 16:30:09 +0900
α-Al2O3/Ga2O3 superlattices coherently grown on r-plane sapphire
- ジャーナル論文
- 著者
-
Takayoshi Oshima (author) (この著者で検索)National Institute for Materials Science
;
;Yuji Kato (author) (この著者で検索)Masataka Imura (author) (この著者で検索)National Institute for Materials Science
;
Yoshiko Nakayama (author) (この著者で検索)National Institute for Materials Science
;
Masaki Takeguchi (author) (この著者で検索)National Institute for Materials Science
- キーワード
- Ga2O3, Superlattice
- 刊行年月日
- 2018-06-01
- 更新時刻
- 2024-01-05 22:12:13 +0900
Near-vertical plasma-free HCl gas etching on (011) β-Ga2O3
- ジャーナル論文
- 著者
-
Takayoshi Oshima (author) (この著者で検索)
;
Yuichi Oshima (author) (この著者で検索)
- キーワード
- Ga2O3, crystallographic etching, (011)
- 刊行年月日
- 2025-01-01
- 更新時刻
- 2026-01-24 15:43:35 +0900
Using selective-area growth and selective-area etching on (−102) β-Ga2O3 substrates to fabricate plasma-damage-free vertical fins and trenches
- ジャーナル論文
- 著者
-
Takayoshi Oshima (author) (この著者で検索)National Institute for Materials Science Research Center for Electronic and Optical Materials
;
Yuichi Oshima (author) (この著者で検索)National Institute for Materials Science Research Center for Electronic and Optical Materials
- キーワード
- Ga2O3, (-102), selective area growth, selective area etching
- 刊行年月日
- 2024-01-22
- 更新時刻
- 2025-01-25 12:30:12 +0900
Lattice-matched (Al x Sc y Ga1− x − y )2O3/ β -Ga2O3 heterostructures with widely tunable bandgap
- ジャーナル論文
- 著者
-
Kazuki Koreishi (author) (この著者で検索)
https://orcid.org/0009-0000-1580-8262
(unauthenticated)
;
Kodai Niitsu (author) (この著者で検索)
;
Takuto Soma (author) (この著者で検索)
https://orcid.org/0000-0001-8685-9606
(unauthenticated)
;
Kohei Yoshimatsu (author) (この著者で検索)
https://orcid.org/0000-0001-9288-068X
(unauthenticated)
;
Akira Ohtomo (author) (この著者で検索)
https://orcid.org/0000-0003-0300-4712
(unauthenticated)
- キーワード
- Ga2O3, Wide bandgap, Bandgap engineering
- 刊行年月日
- 2026-07-06
- 更新時刻
- 2026-08-06 09:39:59 +0900