Photoelectron holographic study for atomic site occupancy for Si dopants in Si-doped κ-Ga2O3(001)
- ジャーナル論文
- 著者
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Yuhua Tsai (author) (この著者で検索)National Institute for Materials Science Research Center for Electronic and Optical Materials/Functional Materials Field/Nano Electronics Device Materials Group
;
;Yusuke Hashimoto (author) (この著者で検索)NAIST;ZeXu Sun (author) (この著者で検索)NAIST;Takuya Moriki (author) (この著者で検索)NAIST;Takashi Tadamura (author) (この著者で検索)NAISTTakahiro Nagata (author) (この著者で検索)National Institute for Materials Science Research Center for Electronic and Optical Materials/Functional Materials Field/Nano Electronics Device Materials Group
;
;Piero Mazzolini (author) (この著者で検索)University of Parma;Antonella Parisini (author) (この著者で検索)University of Parma;Matteo Bosi (author) (この著者で検索)IMEM-CNR;Luca Seravalli (author) (この著者で検索)IMEM-CNR;Tomohiro Matsushita (author) (この著者で検索)NAISTYoshiyuki Yamashita (author) (この著者で検索)National Institute for Materials Science Research Center for Electronic and Optical Materials/Functional Materials Field/Nano Electronics Device Materials Group
- キーワード
- Ga2O3, κ-Ga2O3
- 刊行年月日
- 2024-04-03
- 更新時刻
- 2025-03-07 12:30:11 +0900
Atomic position and the chemical state of an active Sn dopant for Sn-doped β-Ga2O3(001)
- ジャーナル論文
- 著者
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Yuhua Tsai (author) (この著者で検索)National Institute for Materials Science
;
Masaaki Kobata (author) (この著者で検索)
https://orcid.org/0000-0002-9710-6308
(unauthenticated)
;
Tatsuo Fukuda (author) (この著者で検索)
https://orcid.org/0000-0002-4832-5862
(unauthenticated)
;
Hajime Tanida (author) (この著者で検索)
https://orcid.org/0009-0002-8468-7315
(unauthenticated)
;
;Toru Kobayashi (author) (この著者で検索)Yoshiyuki Yamashita (author) (この著者で検索)National Institute for Materials Science
- キーワード
- Ga2O3, dopant, b-Ga2O3
- 刊行年月日
- 2024-03-11
- 更新時刻
- 2024-03-19 12:30:20 +0900
Lattice-matched (Al x Sc y Ga1− x − y )2O3/ β -Ga2O3 heterostructures with widely tunable bandgap
- ジャーナル論文
- 著者
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Kazuki Koreishi (author) (この著者で検索)
https://orcid.org/0009-0000-1580-8262
(unauthenticated)
;
Kodai Niitsu (author) (この著者で検索)
;
Takuto Soma (author) (この著者で検索)
https://orcid.org/0000-0001-8685-9606
(unauthenticated)
;
Kohei Yoshimatsu (author) (この著者で検索)
https://orcid.org/0000-0001-9288-068X
(unauthenticated)
;
Akira Ohtomo (author) (この著者で検索)
https://orcid.org/0000-0003-0300-4712
(unauthenticated)
- キーワード
- Ga2O3, Wide bandgap, Bandgap engineering
- 刊行年月日
- 2026-07-06
- 更新時刻
- 2026-08-06 09:39:59 +0900
Characteristics of β-Ga2O3/Al2O3/Pt capacitors with a Ga2O3 surface modified using the dummy-SiO2 process
- ジャーナル論文
- 著者
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Toshihide Nabatame (author) (この著者で検索)National Institute for Materials Science Research Center for Materials Nanoarchitectonics (MANA)
;
Yoshihiro Irokawa (author) (この著者で検索)National Institute for Materials Science Research Center for Electronic and Optical Materials/Functional Materials Field/Ultra-wide Bandgap Semiconductors Group
;
;Tomomi Sawada (author) (この著者で検索)National Institute for Materials Science Research Center for Materials Nanoarchitectonics (MANA)/Semiconductor Materials Field/Thin Film Electronics Group;Hiromi Miura (author) (この著者で検索)National Institute for Materials Science Research Center for Materials Nanoarchitectonics (MANA)/Semiconductor Materials Field/Thin Film Electronics Group;Manami Miyamoto (author) (この著者で検索)National Institute for Materials Science Research Center for Materials Nanoarchitectonics (MANA)/Semiconductor Materials Field/Thin Film Electronics GroupTakashi Onaya (author) (この著者で検索)
https://orcid.org/0000-0002-2710-8623
(unauthenticated)
National Institute for Materials Science Research Center for Materials Nanoarchitectonics (MANA)/Semiconductor Materials Field/Thin Film Electronics Group
;
Yasuo Koide (author) (この著者で検索)National Institute for Materials Science Research Center for Electronic and Optical Materials/Functional Materials Field/Next-generation Semiconductor Group
;
Kazuhito Tsukagoshi (author) (この著者で検索)National Institute for Materials Science Research Center for Materials Nanoarchitectonics (MANA)/Semiconductor Materials Field/Thin Film Electronics Group
- キーワード
- Ga2O3, atomic layer deposition, dummy-SiO2, Al2O3, positive bias stress
- 刊行年月日
- 2026-06-01
- 更新時刻
- 2026-08-18 11:30:17 +0900
Halide vapor phase epitaxy of a thick c -plane α-Ga2O3 film on a high-quality α-Cr2O3/sapphire template
- ジャーナル論文
- 著者
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Yuichi Oshima (author) (この著者で検索)
;
Takayoshi Oshima (author) (この著者で検索)
;
Shiyu Xiao (author) (この著者で検索)
https://orcid.org/0009-0007-0382-0396
(unauthenticated)
;
;Kazuto Murakami (author) (この著者で検索);Katsuhiro Imai (author) (この著者で検索)Takahiro Tomita (author) (この著者で検索)
- キーワード
- Ga2O3, HVPE, Cr2O3
- 刊行年月日
- 2026-02-21
- 更新時刻
- 2026-02-18 16:30:15 +0900
Fabrication of coherent γ-Al2O3/Ga2O3 superlattices on MgAl2O4 substrates
- ジャーナル論文
- 著者
-
;Yuji Kato (author) (この著者で検索)Masataka Imura (author) (この著者で検索)National Institute for Materials Science
;
Yoshiko Nakayama (author) (この著者で検索)National Institute for Materials Science
;
Masaki Takeguchi (author) (この著者で検索)National Institute for Materials Science
;
Takayoshi Oshima (author) (この著者で検索)National Institute for Materials Science
- キーワード
- Ga2O3, Superlattice
- 刊行年月日
- 2019-06-01
- 更新時刻
- 2024-01-05 22:11:34 +0900
First-principles lattice thermal conductivity calculation for Ga2O3 / C2/m (12) / materials id 886
- データセット
- コレクション
- MDR lattice thermal conductivity calculation database
- 著者
-
Atsushi Togo (author) (この著者で検索)National Institute for Materials Science Center for Basic Research on Materials
- キーワード
- Lattice thermal conductivity, Ga2O3
- 刊行年月日
- 更新時刻
- 2026-01-24 14:36:41 +0900
First-principles lattice thermal conductivity calculation for Ga2O3 / R-3c (167) / materials id 1243
- データセット
- コレクション
- MDR lattice thermal conductivity calculation database
- 著者
-
Atsushi Togo (author) (この著者で検索)National Institute for Materials Science Center for Basic Research on Materials
- キーワード
- Lattice thermal conductivity, Ga2O3
- 刊行年月日
- 更新時刻
- 2026-01-24 12:32:36 +0900
Ab-initio phonon calculation for Ga2O3 / C2/m (12) / materials id 886
- データセット
- コレクション
- MDR phonon calculation database
- 著者
-
Atsushi Togo (author) (この著者で検索)National Institute for Materials Science MaDIS
- キーワード
- Phonon, Ga2O3, C2/m (12)
- 刊行年月日
- 更新時刻
- 2023-05-14 18:54:18 +0900