- Creative Commons BY Attribution 4.0 International (13)
- In Copyright (8)
- Creative Commons BY-NC-ND Attribution-NonCommercial-NoDerivs 4.0 International (5)
- Creative Commons BY-NC Attribution-NonCommercial 4.0 International (1)
- Creative Commons BY-NC-SA Attribution-NonCommercial-ShareAlike 4.0 International (1)
Halide vapor phase epitaxy of a thick c -plane α-Ga2O3 film on a high-quality α-Cr2O3/sapphire template
- ジャーナル論文
- 著者
-
Yuichi Oshima (author) (この著者で検索)
;
Takayoshi Oshima (author) (この著者で検索)
;
Shiyu Xiao (author) (この著者で検索)
https://orcid.org/0009-0007-0382-0396
(unauthenticated)
;
;Kazuto Murakami (author) (この著者で検索);Katsuhiro Imai (author) (この著者で検索)Takahiro Tomita (author) (この著者で検索) - キーワード
- Ga2O3, HVPE, Cr2O3
- 刊行年月日
- 2026-02-21
- 更新時刻
- 2026-02-18 16:30:15 +0900
Epitaxial Lateral Overgrowth of c-plane α-Ga2O3 using a stripe mask with ultra-narrow windows
- ジャーナル論文
- 著者
-
Yuichi Oshima (author) (この著者で検索)National Institute for Materials Science Research Center for Electronic and Optical Materials/Functional Materials Field/Ultra-wide Bandgap Semiconductors Group
;
Takashi Shinohe (author) (この著者で検索)FLOSFIA INC.
- キーワード
- Ga2O3, dislocation, HVPE, ELO
- 刊行年月日
- 2025-05-19
- 更新時刻
- 2025-05-21 16:30:09 +0900
Epitaxial lateral overgrowth of m -plane α-Ga 2 O 3 by halide vapor phase epitaxy
- ジャーナル論文
- 著者
-
Yuichi Oshima (author) (この著者で検索)
;
Takashi Shinohe (author) (この著者で検索)
https://orcid.org/0009-0000-5559-1432
(unauthenticated)
- キーワード
- Ga2O3, dislocation, ELO, HVPE
- 刊行年月日
- 2025-12-31
- 更新時刻
- 2025-04-23 12:30:12 +0900
Anisotropic non-plasma HCl gas etching of (010) β-Ga2O3 substrate
- ジャーナル論文
- 著者
-
Takayoshi Oshima (author) (この著者で検索)National Institute for Materials Science
;
Yuichi Oshima (author) (この著者で検索)National Institute for Materials Science
- キーワード
- Ga2O3, HCl gas etching
- 刊行年月日
- 2023-06-01
- 更新時刻
- 2024-06-15 08:30:13 +0900
Fabrication of β -Ga 2 O 3 /air-gap structures on (010) β -Ga 2 O 3 by wet etching in tetramethylammonium hydroxide (TMAH)
- ジャーナル論文
- 著者
-
Takayoshi Oshima (author) (この著者で検索)
- キーワード
- Ga2O3, TMAH, wet etching, MEMS
- 刊行年月日
- 2025-11-01
- 更新時刻
- 2025-11-27 08:30:13 +0900
High Schottky barrier formation in tilted-dipole PdCoO2/ β -Ga2O3 (001) interfaces
- ジャーナル論文
- 著者
-
Takayuki Harada (author) (この著者で検索)
;
Takuro Nagai (author) (この著者で検索)
;
Kohei Sasaki (author) (この著者で検索)
https://orcid.org/0000-0002-8923-7703
(unauthenticated)
- キーワード
- Thin film, Ga2O3, Delafossite, Power devices, Schottky
- 刊行年月日
- 2026-06-01
- 更新時刻
- 2026-06-10 14:51:59 +0900
Atomic position and the chemical state of an active Sn dopant for Sn-doped β-Ga2O3(001)
- ジャーナル論文
- 著者
-
Yuhua Tsai (author) (この著者で検索)National Institute for Materials Science
;
Masaaki Kobata (author) (この著者で検索)
https://orcid.org/0000-0002-9710-6308
(unauthenticated)
;
Tatsuo Fukuda (author) (この著者で検索)
https://orcid.org/0000-0002-4832-5862
(unauthenticated)
;
Hajime Tanida (author) (この著者で検索)
https://orcid.org/0009-0002-8468-7315
(unauthenticated)
;
;Toru Kobayashi (author) (この著者で検索)Yoshiyuki Yamashita (author) (この著者で検索)National Institute for Materials Science
- キーワード
- Ga2O3, dopant, b-Ga2O3
- 刊行年月日
- 2024-03-11
- 更新時刻
- 2024-03-19 12:30:20 +0900
Using selective-area growth and selective-area etching on (−102) β-Ga2O3 substrates to fabricate plasma-damage-free vertical fins and trenches
- ジャーナル論文
- 著者
-
Takayoshi Oshima (author) (この著者で検索)National Institute for Materials Science Research Center for Electronic and Optical Materials
;
Yuichi Oshima (author) (この著者で検索)National Institute for Materials Science Research Center for Electronic and Optical Materials
- キーワード
- Ga2O3, (-102), selective area growth, selective area etching
- 刊行年月日
- 2024-01-22
- 更新時刻
- 2025-01-25 12:30:12 +0900