Lattice-matched (Al x Sc y Ga1− x − y )2O3/ β -Ga2O3 heterostructures with widely tunable bandgap
- ジャーナル論文
- 著者
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Kazuki Koreishi (author) (この著者で検索)
https://orcid.org/0009-0000-1580-8262
(unauthenticated)
;
Kodai Niitsu (author) (この著者で検索)
;
Takuto Soma (author) (この著者で検索)
https://orcid.org/0000-0001-8685-9606
(unauthenticated)
;
Kohei Yoshimatsu (author) (この著者で検索)
https://orcid.org/0000-0001-9288-068X
(unauthenticated)
;
Akira Ohtomo (author) (この著者で検索)
https://orcid.org/0000-0003-0300-4712
(unauthenticated)
- キーワード
- Ga2O3, Wide bandgap, Bandgap engineering
- 刊行年月日
- 2026-07-06
- 更新時刻
- 2026-08-06 09:39:59 +0900
Fabrication of coherent γ-Al2O3/Ga2O3 superlattices on MgAl2O4 substrates
- ジャーナル論文
- 著者
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;Yuji Kato (author) (この著者で検索)Masataka Imura (author) (この著者で検索)National Institute for Materials Science
;
Yoshiko Nakayama (author) (この著者で検索)National Institute for Materials Science
;
Masaki Takeguchi (author) (この著者で検索)National Institute for Materials Science
;
Takayoshi Oshima (author) (この著者で検索)National Institute for Materials Science
- キーワード
- Ga2O3, Superlattice
- 刊行年月日
- 2019-06-01
- 更新時刻
- 2024-01-05 22:11:34 +0900
Near-vertical plasma-free HCl gas etching on (011) β-Ga2O3
- ジャーナル論文
- 著者
-
Takayoshi Oshima (author) (この著者で検索)
;
Yuichi Oshima (author) (この著者で検索)
- キーワード
- Ga2O3, crystallographic etching, (011)
- 刊行年月日
- 2025-01-01
- 更新時刻
- 2026-01-24 15:43:35 +0900
Anisotropic non-plasma HCl gas etching of (010) β-Ga2O3 substrate
- ジャーナル論文
- 著者
-
Takayoshi Oshima (author) (この著者で検索)National Institute for Materials Science
;
Yuichi Oshima (author) (この著者で検索)National Institute for Materials Science
- キーワード
- Ga2O3, HCl gas etching
- 刊行年月日
- 2023-06-01
- 更新時刻
- 2024-06-15 08:30:13 +0900
Wet etching of (−102) β-Ga 2 O 3 with tetramethylammonium hydroxide (TMAH)
- ジャーナル論文
- 著者
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Takayoshi Oshima (author) (この著者で検索)
- キーワード
- Ga2O3, wet etching, TMAH
- 刊行年月日
- 2026-12-31
- 更新時刻
- 2026-06-11 15:11:01 +0900
Plasma-free anisotropic selective-area etching of β-Ga 2 O 3 using forming gas under atmospheric pressure
- ジャーナル論文
- 著者
-
Takayoshi Oshima (author) (この著者で検索)
;
Rie Togashi (author) (この著者で検索)
https://orcid.org/0000-0002-9467-0755
(unauthenticated)
;
Yuichi Oshima (author) (この著者で検索)
- キーワード
- Ga2O3, forming gas, anisotropic etching, plasma-free process
- 刊行年月日
- 2024-12-31
- 更新時刻
- 2024-07-31 12:30:20 +0900
Using selective-area growth and selective-area etching on (−102) β-Ga2O3 substrates to fabricate plasma-damage-free vertical fins and trenches
- ジャーナル論文
- 著者
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Takayoshi Oshima (author) (この著者で検索)National Institute for Materials Science Research Center for Electronic and Optical Materials
;
Yuichi Oshima (author) (この著者で検索)National Institute for Materials Science Research Center for Electronic and Optical Materials
- キーワード
- Ga2O3, (-102), selective area growth, selective area etching
- 刊行年月日
- 2024-01-22
- 更新時刻
- 2025-01-25 12:30:12 +0900