21 件のレコードが見つかりました。
Optical control of multiple resistance levels in graphene for memristic applications
- ジャーナル論文
- 著者
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;Harsimran Kaur Mann (author) (この著者で検索);Mainak Mondal (author) (この著者で検索);Vivek Sah (author) (この著者で検索)Kenji Watanabe (author) (この著者で検索)
;
Takashi Taniguchi (author) (この著者で検索)
;
Akshay Singh (author) (この著者で検索)
https://orcid.org/0000-0003-1059-065X
(unauthenticated)
;
Aveek Bid (author) (この著者で検索)
https://orcid.org/0000-0002-2378-7980
(unauthenticated)
- キーワード
- Neuromorphic computing, memristors, hexagonal boron nitride
- 刊行年月日
- 2024-10-29
- 更新時刻
- 2025-02-06 12:30:34 +0900
Position-controlled quantum emitters with reproducible emission wavelength in hexagonal boron nitride
- ジャーナル論文
- 著者
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;Clarisse Fournier (author) (この著者で検索);Alexandre Plaud (author) (この著者で検索);Sébastien Roux (author) (この著者で検索);Aurélie Pierret (author) (この著者で検索);Michael Rosticher (author) (この著者で検索)Kenji Watanabe (author) (この著者で検索)National Institute for Materials Science
;
Takashi Taniguchi (author) (この著者で検索)National Institute for Materials Science
;
;Stéphanie Buil (author) (この著者で検索);Xavier Quélin (author) (この著者で検索);Julien Barjon (author) (この著者で検索);Jean-Pierre Hermier (author) (この著者で検索)Aymeric Delteil (author) (この著者で検索)
- キーワード
- Single photon emitters, hexagonal boron nitride, quantum emitters
- 刊行年月日
- 2021-06-18
- 更新時刻
- 2025-02-27 12:30:29 +0900
Evolution of nanopores in hexagonal boron nitride
- ジャーナル論文
- 著者
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;Chunhui Dai (author) (この著者で検索);Derek Popple (author) (この著者で検索);Cong Su (author) (この著者で検索);Ji-Hoon Park (author) (この著者で検索)Kenji Watanabe (author) (この著者で検索)National Institute for Materials Science
;
Takashi Taniguchi (author) (この著者で検索)National Institute for Materials Science
;
;Jing Kong (author) (この著者で検索)Alex Zettl (author) (この著者で検索)
- キーワード
- Atomically-precise nanopores, hexagonal boron nitride, transmission electron microscopy
- 刊行年月日
- 2023-06-05
- 更新時刻
- 2025-02-14 12:32:12 +0900
A high-mobility electronic system at an electrolyte-gated oxide surface
- ジャーナル論文
- 著者
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;Patrick Gallagher (author) (この著者で検索);Menyoung Lee (author) (この著者で検索);Trevor A. Petach (author) (この著者で検索);Sam W. Stanwyck (author) (この著者で検索);James R. Williams (author) (この著者で検索)Kenji Watanabe (author) (この著者で検索)National Institute for Materials Science
;
Takashi Taniguchi (author) (この著者で検索)National Institute for Materials Science
;
David Goldhaber-Gordon (author) (この著者で検索)
- キーワード
- Electrolyte gating, carrier density, hexagonal boron nitride
- 刊行年月日
- 2015-03-12
- 更新時刻
- 2025-02-28 08:30:38 +0900
Electrochemistry at the Edge of a van der Waals Heterostructure
- ジャーナル論文
- 著者
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;Aleksandra Plačkić (author) (この著者で検索);Tilmann J. Neubert (author) (この著者で検索);Kishan Patel (author) (この著者で検索);Michel Kuhl (author) (この著者で検索)Kenji Watanabe (author) (この著者で検索)National Institute for Materials Science
;
Takashi Taniguchi (author) (この著者で検索)National Institute for Materials Science
;
;Amaia Zurutuza (author) (この著者で検索);Roman Sordan (author) (この著者で検索)Kannan Balasubramanian (author) (この著者で検索)
- キーワード
- Electrochemistry, graphene, hexagonal boron nitride
- 刊行年月日
- 2023-12-18
- 更新時刻
- 2025-02-23 22:46:08 +0900
All About the Interface: Do Residual Contaminants at A High‐Quality h‐BN Monolayer Perylene Diimide Interface Cause Charge Trapping?
- ジャーナル論文
- 著者
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;Lukas Renn (author) (この著者で検索);Lisa S. Walter (author) (この著者で検索)Kenji Watanabe (author) (この著者で検索)National Institute for Materials Science
;
Takashi Taniguchi (author) (この著者で検索)National Institute for Materials Science
;
R. Thomas Weitz (author) (この著者で検索)
- キーワード
- Charge transport, organic semiconducting crystals, hexagonal boron nitride
- 刊行年月日
- 2022-01-29
- 更新時刻
- 2025-02-26 08:30:49 +0900
Phonon-enhanced nonlinearities in hexagonal boron nitride
- ジャーナル論文
- 著者
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;Jared S. Ginsberg (author) (この著者で検索);M. Mehdi Jadidi (author) (この著者で検索);Jin Zhang (author) (この著者で検索);Cecilia Y. Chen (author) (この著者で検索);Nicolas Tancogne-Dejean (author) (この著者で検索);Sang Hoon Chae (author) (この著者で検索);Gauri N. Patwardhan (author) (この著者で検索);Lede Xian (author) (この著者で検索)Kenji Watanabe (author) (この著者で検索)National Institute for Materials Science
;
Takashi Taniguchi (author) (この著者で検索)National Institute for Materials Science
;
;James Hone (author) (この著者で検索);Angel Rubio (author) (この著者で検索)Alexander L. Gaeta (author) (この著者で検索)
- キーワード
- Polar crystals, optical nonlinearities, hexagonal boron nitride
- 刊行年月日
- 2023-11-24
- 更新時刻
- 2025-02-11 12:30:15 +0900
Self-aligned gate electrode for hydrogen-terminated diamond field-effect transistors with a hexagonal boron nitride gate insulator
- ジャーナル論文
- 著者
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Yosuke Sasama (author) (この著者で検索)
;
Takuya Iwasaki (author) (この著者で検索)
;
Mohammad Monish (author) (この著者で検索)
;
Kenji Watanabe (author) (この著者で検索)
;
Takashi Taniguchi (author) (この著者で検索)
;
Yamaguchi Takahide (author) (この著者で検索)
- キーワード
- Hydrogen-terminated diamond, Field-effect transistors, hexagonal boron nitride, Self-aligned gate electrode
- 刊行年月日
- 2024-08-26
- 更新時刻
- 2024-09-12 16:30:45 +0900
Self-selective van der Waals heterostructures for large scale memory array
- ジャーナル論文
- 著者
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;Linfeng Sun (author) (この著者で検索);Yishu Zhang (author) (この著者で検索);Gyeongtak Han (author) (この著者で検索);Geunwoo Hwang (author) (この著者で検索);Jinbao Jiang (author) (この著者で検索);Bomin Joo (author) (この著者で検索)Kenji Watanabe (author) (この著者で検索)National Institute for Materials Science
;
Takashi Taniguchi (author) (この著者で検索)National Institute for Materials Science
;
;Young-Min Kim (author) (この著者で検索);Woo Jong Yu (author) (この著者で検索);Bai-Sun Kong (author) (この著者で検索);Rong Zhao (author) (この著者で検索)Heejun Yang (author) (この著者で検索)
- キーワード
- Crossbar array, memory cell, hexagonal boron nitride
- 刊行年月日
- 2019-07-18
- 更新時刻
- 2025-02-23 22:49:49 +0900
Gapped Dirac materials and quantum valley currents in dual-gated hBN/bilayer-graphene heterostructures
- ジャーナル論文
- 著者
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Takuya Iwasaki (author) (この著者で検索)National Institute for Materials Science
;
;Yoshifumi Morita (author) (この著者で検索)Kenji Watanabe (author) (この著者で検索)National Institute for Materials Science
;
Takashi Taniguchi (author) (この著者で検索)National Institute for Materials Science
- キーワード
- bilayer graphene, hexagonal boron nitride, heterostructure, valley Hall effect
- 刊行年月日
- 2024-02-08
- 更新時刻
- 2025-01-10 16:31:45 +0900