13 records found.
Self-aligned and self-limiting van der Waals epitaxy of monolayer MoS2 for scalable 2D electronics
- Journal article
- Creator
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Yoshiki Sakuma (author) (Search by this author)National Institute for Materials Science
;
;Keisuke Atsumi (author) (Search by this author)Takanobu Hiroto (author) (Search by this author)National Institute for Materials Science
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Jun Nara (author) (Search by this author)National Institute for Materials Science
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Akihiro Ohtake (author) (Search by this author)National Institute for Materials Science
;
;Yuki Ono (author) (Search by this author);Takashi Matsumoto (author) (Search by this author);Yukihiro Muta (author) (Search by this author);Kai Takeda (author) (Search by this author);Emi Kano (author) (Search by this author);Toshiki Yasuno (author) (Search by this author);Xu Yang (author) (Search by this author);Nobuyuki Ikarashi (author) (Search by this author);Asato Suzuki (author) (Search by this author);Michio Ikezawa (author) (Search by this author);Shuhong Li (author) (Search by this author);Tomonori Nishimura (author) (Search by this author);Kaito Kanahashi (author) (Search by this author)Kosuke Nagashio (author) (Search by this author) - Keyword
- MoS2, epitaxial growth, MOCVD
- Date published
- 2026-01-21
- Updated at
- 2026-01-29 16:30:04 +0900
Epitaxial configuration of unidirectionally aligned MoS2 monolayer on sapphire
- Journal article
- Creator
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Akihiro Ohtake (author) (Search by this author)
;
Jun Nara (author) (Search by this author)
;
Yoshiki Sakuma (author) (Search by this author)
- Keyword
- transition-metal dichalcogenide, low-energy electron diffraction, epitaxial growth
- Date published
- 2026-01-14
- Updated at
- 2026-01-14 13:07:15 +0900
Highly Oriented Epitaxial Hexagonal Boron Nitride Multilayers on High‐Temperature‐Resistant Single‐Crystal Aluminum Nitride (0001)
- Journal article
- Creator
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Xu Yang (author) (Search by this author)
https://orcid.org/0000-0001-8195-5850
(unauthenticated)
National Institute for Materials Science
;
;Markus Pristovsek (author) (Search by this author);Shugo Nitta (author) (Search by this author);Yoshio Honda (author) (Search by this author)Akihiro Ohtake (author) (Search by this author)National Institute for Materials Science
;
Yoshiki Sakuma (author) (Search by this author)National Institute for Materials Science
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Takanobu Hiroto (author) (Search by this author)National Institute for Materials Science
;
;Takayuki Ishida (author) (Search by this author);Michio Ikezawa (author) (Search by this author);Qixin Guo (author) (Search by this author)Hiroshi Amano (author) (Search by this author) - Keyword
- Epitaxial BN layers
- Date published
- 2025-09-29
- Updated at
- 2025-12-15 13:40:58 +0900
Self-Assembly of Symmetric GaAs Quantum Dots on (111)A Substrates: Suppression of Fine-Structure Splitting
- Journal article
- Creator
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Takaaki Mano (author) (Search by this author)
;
;Marco Abbarchi (author) (Search by this author)Takashi Kuroda (author) (Search by this author)
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;Brian McSkimming (author) (Search by this author)Akihiro Ohtake (author) (Search by this author)
;
Kazutaka Mitsuishi (author) (Search by this author)
;
Kazuaki Sakoda (author) (Search by this author)
- Keyword
- GaAs, Quantum Dot, Droplet Epitaxy, Entanglement, (111)A, Molecular Beam Epitaxy, Fine Structure Splitting
- Date published
- 2010-05-28
- Updated at
- 2025-12-08 16:30:04 +0900
液滴エピタキシー法による量子ドットの作製技術
- Book
- Creator
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間野 高明 (author) (Search by this author)電子・光機能材料研究センター/光学材料分野/半導体エピタキシャル構造グループ, 物質・材料研究機構
;
大竹 晃浩 (author) (Search by this author)電子・光機能材料研究センター/光学材料分野/半導体エピタキシャル構造グループ, 物質・材料研究機構
- Keyword
- 液滴エピタキシー, GaAs, InAs, 量子ドット, 量子光源
- Date published
- [2025年9月]
- Updated at
- 2025-10-21 16:06:39 +0900
Effects of arsenic oxides on GaAs surfaces on photoluminescence properties of buried InGaAs quantum wells: Dependence on initial surfaces before oxidation
- Journal article
- Creator
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Zhao Ma (author) (Search by this author)
;
Takaaki Mano (author) (Search by this author)
;
Akihiro Ohtake (author) (Search by this author)
;
Takashi Kuroda (author) (Search by this author)
- Keyword
- GaAs, Surface, Termination, Oxide, Arsenic
- Date published
- 2025-06-28
- Updated at
- 2025-06-27 16:30:25 +0900
Controlled polarity inversion in GaAs/Ge/GaAs{111} heterostructures
- Journal article
- Creator
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Akihiro Ohtake (author) (Search by this author)
;
Yusuke Hayashi (author) (Search by this author)
- Keyword
- Heterostructures, Quasi-phase matching, Surface structure, molecular-beam epitaxy
- Date published
- 2025-05-19
- Updated at
- 2025-05-20 16:30:12 +0900
Enhanced photoluminescence intensity of buried InGaAs/GaAs(001) quantum wells by sulfur termination
- Journal article
- Creator
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Zhao Ma (author) (Search by this author)
;
Takaaki Mano (author) (Search by this author)
;
Akihiro Ohtake (author) (Search by this author)
;
Takashi Kuroda (author) (Search by this author)
- Keyword
- Sulfur, Termination, Oxide, Photoluminescence, GaAs
- Date published
- 2024-12-02
- Updated at
- 2025-02-06 12:31:18 +0900
Arsenic-flux dependence of surface morphology in InAs homoepitaxy
- Journal article
- Creator
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Akihiro Ohtake (author) (Search by this author)Research Center for Electronic and Optical Materials/Optical Materials Field/Semiconductor Epitaxial Structures Group, National Institute for Materials Science
;
Takuya Kawazu (author) (Search by this author)Research Center for Electronic and Optical Materials/Optical Materials Field/Semiconductor Epitaxial Structures Group, National Institute for Materials Science
;
Takaaki Mano (author) (Search by this author)Research Center for Electronic and Optical Materials/Optical Materials Field/Semiconductor Epitaxial Structures Group, National Institute for Materials Science
- Keyword
- surface reconstructions, molecular beam epitaxy, scanning tunneling microscopy, III-V semiconductors
- Date published
- 2024-12-01
- Updated at
- 2024-09-25 16:30:51 +0900
Film Thermoelectric Generator of Multiple 2-D Electron Gas
- Journal article
- Creator
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;Yuto Uematsu (author) (Search by this author);Takafumi Ishibe (author) (Search by this author);Seiya Kozuki (author) (Search by this author)Takaaki Mano (author) (Search by this author)National Institute for Materials Science
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Akihiro Ohtake (author) (Search by this author)National Institute for Materials Science
;
Hideki T. Miyazaki (author) (Search by this author)National Institute for Materials Science
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Takeshi Kasaya (author) (Search by this author)National Institute for Materials Science
;
;Yuichiro Yamashita (author) (Search by this author);Mutsunori Uenuma (author) (Search by this author)Yoshiaki Nakamura (author) (Search by this author)
- Keyword
- GaAs, Thermoelectric Generator, Two-dimensional electron gas
- Date published
- 2024-06-24
- Updated at
- 2024-08-01 15:33:24 +0900