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説明:

In this study, we propose stacked GaAs 2DEG thermoelectric generator (TEG), which has a number of stacked channel structures for low electrical resistance. Our GaAs 2DEG TEGs with channels formed in triangular well exhibit ultrahigh thermoelectric power factor. In addition, the interfaces of the stacked 2DEG intensify phonon scatterings, resulting in the reduction of thermal conductivity. The stacked 2DEG TEGs exhibit 9 times higher sheet electrical conductivity than the unstacked 2DEG one, resulting in ~7.5 times higher output power of stacked 2DEG TEGs (5.1 nW) than that of unstacked 2DEG ones.

権利情報:

• In Copyright
  

  © 2024 IEEE. Personal use of this material is permitted.  Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.

キーワード: GaAs, Thermoelectric Generator, Two-dimensional electron gas

刊行年月日: 2024-06-24

出版者: Institute of Electrical and Electronics Engineers (IEEE)

掲載誌:

• IEEE Transactions on Electron Devices (ISSN: 00189383) vol. 71 issue. 8 p. 4834-4840

研究助成金:

• Japan Society for the Promotion of Science (JSPS) Fellows T22KJ2052
• Grantin-Aid for Scientific Research 23H00258
• “Advanced Research Infrastructure for Materials and Nanotechnology in Japan (ARIM)” of the Ministry of Education, Culture, Sports, Science and Technology JPMXP1223NM5062

原稿種別: 著者最終稿 (Accepted manuscript)

MDR DOI: https://doi.org/10.48505/nims.4617

公開URL: https://doi.org/10.1109/ted.2024.3412863

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更新時刻: 2024-08-01 15:33:24 +0900

MDRでの公開時刻: 2026-06-24 08:32:53 +0900