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In this study, we propose stacked GaAs 2DEG thermoelectric generator (TEG), which has a number of stacked channel structures for low electrical resistance. Our GaAs 2DEG TEGs with channels formed in triangular well exhibit ultrahigh thermoelectric power factor. In addition, the interfaces of the stacked 2DEG intensify phonon scatterings, resulting in the reduction of thermal conductivity. The stacked 2DEG TEGs exhibit 9 times higher sheet electrical conductivity than the unstacked 2DEG one, resulting in ~7.5 times higher output power of stacked 2DEG TEGs (5.1 nW) than that of unstacked 2DEG ones.

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Keyword: GaAs, Thermoelectric Generator, Two-dimensional electron gas

Date published: 2024-06-24

Publisher: Institute of Electrical and Electronics Engineers (IEEE)

Journal:

• IEEE Transactions on Electron Devices (ISSN: 00189383) vol. 71 issue. 8 p. 4834-4840

Funding:

• Japan Society for the Promotion of Science (JSPS) Fellows T22KJ2052
• Grantin-Aid for Scientific Research 23H00258
• “Advanced Research Infrastructure for Materials and Nanotechnology in Japan (ARIM)” of the Ministry of Education, Culture, Sports, Science and Technology JPMXP1223NM5062

Manuscript type: Author's version (Accepted manuscript)

MDR DOI: https://doi.org/10.48505/nims.4617

First published URL: https://doi.org/10.1109/ted.2024.3412863

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Updated at: 2024-08-01 15:33:24 +0900

Published on MDR: 2026-06-24 08:32:53 +0900